Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Yi Hao Chiu"'
Publikováno v:
Expert Systems with Applications. 213:118894
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7443e03f4238d1b6f24448e8481f1eb
https://doi.org/10.1016/j.eswa.2022.118894
https://doi.org/10.1016/j.eswa.2022.118894
Publikováno v:
2020 Asia-Pacific International Symposium on Advanced Reliability and Maintenance Modeling (APARM).
In a project, a mission completion time for each mission should be presented as stochastic due to uncertainly available machines/human resources. Besides, a charge for each mission is affected according to the completion time of the mission. In order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b17f5dff3add3153571c759afc616f48
https://doi.org/10.1109/aparm49247.2020.9209401
https://doi.org/10.1109/aparm49247.2020.9209401
Publikováno v:
International Journal of Performability Engineering. 17:433
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef3850919609910fea162453cf00ba4f
https://doi.org/10.23940/ijpe.21.05.p3.433443
https://doi.org/10.23940/ijpe.21.05.p3.433443
Publikováno v:
2018 Asia-Pacific Microwave Conference (APMC).
For the high-voltage 60-V square type pLDMOS, a parasitic SCR np arrangement was added into the outer guard-ring zone and modulated the STI width to investigate the impact of the ESD protection immunity. There are five kinds of STI width such as 15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ebbc414cd770590d2f7b16265fdde3
https://doi.org/10.23919/apmc.2018.8617496
https://doi.org/10.23919/apmc.2018.8617496
Autor:
Yu-Lin Jhou, Jen-Hao Lo, Yu-Lin Lin, Yi-Hao Chiu, Pei-Lin Wu, Chih-Hung Yang, Shen-Li Chen, Chun-Ting Kuo, Yi-Hao Chao
Publikováno v:
2018 IEEE International Conference on Consumer Electronics-Taiwan (ICCE-TW).
The traditional p-channel LDMOS is often used as a electrostatic discharge self-protection components in high voltage circuit input/output pads. Nevertheless, it has one serious shortcoming that is the poor conductivity of pLDMOS leads to a very low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141beba44226b79e2ff027afef0d0fae
https://doi.org/10.1109/icce-china.2018.8448414
https://doi.org/10.1109/icce-china.2018.8448414
Autor:
Chih-Ying Yen, Chun-Ting Kuo, Shen-Li Chen, Yi-Hao Chao, Yu-Lin Lin, Yu-Lin Jhou, Jen-Hao Lo, Yi-Hao Chiu, Pei-Lin Wu
Publikováno v:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia).
In this paper, parasitic silicon controlled rectifiers (SCRs) in both the drift and drain regions of 0.5-μm 300-V circular ultra-high-voltage n-channel laterally-diffused MOSFETs (UHV-nLDMOSs) were modulated to improve the resistance of the LDMOSs t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788d438cee87f7b6bfe78d89eed47608
https://doi.org/10.23919/ipec.2018.8507872
https://doi.org/10.23919/ipec.2018.8507872
Autor:
Yi-Hao Chao, Yi-Hao Chiu, Pei-Lin Wu, Chun-Ting Kuo, Yu-Lin Lin, Yu-Lin Jhou, Jen-Hao Lo, Shen-Li Chen, Yi-Cih Wu
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
Discrete modulation was applied to a 60 V nLDMOS drain-side inserted SCR npn-arranged type and pnp-arranged type to investigate the devices' electrostatic discharge (ESD) protection ability. When applying SCR npn-arranged type discrete-anode modulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb1909b8ab5404852857426af6ab42fe
https://doi.org/10.1109/isne.2018.8394683
https://doi.org/10.1109/isne.2018.8394683
Autor:
Wei Sheng Wu, Joseph T. Tseng, Yu Xuan Jiang, Jer Wei Chang, Yi Hong Tsao, Torbjörn E. M. Nordling, Yu Han Chu, Yan Yuan Tseng, Yi Hao Chiu
Publikováno v:
Database: The Journal of Biological Databases and Curation
Translational regulation plays an important role in protein synthesis. Dysregulation of translation causes abnormal cell physiology and leads to diseases such as inflammatory disorders and cancers. An emerging technique, called ribosome profiling (ri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca00d49244682af2d7cd96fff51261fb
https://pubmed.ncbi.nlm.nih.gov/30010738
https://pubmed.ncbi.nlm.nih.gov/30010738
Autor:
Yu-Lin Lin, Jia-Ming Lin, Yi-Hao Chiu, Yi-Hao Chao, Chih-Hung Yang, Yi-Cih Wu, Kuei-Jyun Chen, Jen-Hao Lo, Chun-Ting Kuo, Chih-Ying Yen, Hung-Wei Chen, Shen-Li Chen
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this work, ESD immunity enhancement for the HV n-channel LDMOS with source-end discrete islands fabricated by a TSMC 0.25 μm 60 V process was investigated. An nLDMOS device always has poor ESD capability. If discrete n+ islands are formed in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e5ff794c7525fb8013d9c1147a6f845
https://doi.org/10.1109/ipfa.2017.8060126
https://doi.org/10.1109/ipfa.2017.8060126
Autor:
Yi-Hao Chao, Kuei-Jyun Chen, Jen-Hao Lo, Chih-Ying Yen, Yi-Cih Wu, Shen-Li Chen, Jia-Ming Lin, Yu-Lin Lin, Yi-Hao Chiu, Chih-Hung Yang, Chun-Ting Kuo
Publikováno v:
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia).
HV n-/p-LDMOS devices with the source-side extending into bulk-region to evaluate the electrostatic-discharge (ESD) protection robustness by a TSMC 0.25 µm 60 V process are investigated in this paper. After a systematic analysis, the trigger voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::200d5a2bdf4d88ca1f7b3656918f983b
https://doi.org/10.1109/ifeec.2017.7992390
https://doi.org/10.1109/ifeec.2017.7992390