Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Yi Chun Chan"'
Autor:
Yi Chun Chan, 詹宜竣
98
In recent years, resistive random access memory has been widely researched, based on its low operation voltage、short write/erase time、long storage time、nondestructive readout、multi-bit storage and simple structure will be as a candida
In recent years, resistive random access memory has been widely researched, based on its low operation voltage、short write/erase time、long storage time、nondestructive readout、multi-bit storage and simple structure will be as a candida
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/77715164221664958916
Autor:
Jih-Shuin Jerng, Szu-Fen Huang, Hsin-Yu Yu, Yi-Chun Chan, Huang-Ju Liang, Huey-Wen Liang, Jui-Sheng Sun
Publikováno v:
Critical Care, Vol 22, Iss 1, Pp 1-12 (2018)
Abstract Background The management of complaints in the setting of intensive care may provide opportunities to understand patient and family experiences and needs. However, there are limited reports on the structured application of complaint analysis
Externí odkaz:
https://doaj.org/article/41c5de90d0fe4f9ca5af47fa0f67cc08
Autor:
Yoen Young Chuah1,2, Yi-Chun Chan1 Chanyich@gmail.com
Publikováno v:
Pan African Medical Journal. Jan-Apr2024, Vol. 47, p1-2. 2p.
Autor:
Yi Chun Chan, 詹宜竣
98
In recent years, resistive random access memory has been widely researched, based on its low operation voltage、short write/erase time、long storage time、nondestructive readout、multi-bit storage and simple structure will be as a candida
In recent years, resistive random access memory has been widely researched, based on its low operation voltage、short write/erase time、long storage time、nondestructive readout、multi-bit storage and simple structure will be as a candida
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/23535145210605270637
Autor:
Jung-Hui Tsai, Yi-Chun Chan, Wei-Cheng Chen, Chun Yen Chen, Wen-Chau Liu, Ching-Hong Chang, Jian-Kai Liou
Publikováno v:
IEEE Transactions on Electron Devices. 64:2854-2858
The Characteristics of GaN-based LEDs with hybrid microhole arrays and SiO2 microspheres (MSs)/ nanoparticles (NPs) are comprehensively studied. The SiO2 MSs/NPs antireflection coating, deposited by a rapid convection deposition, acts as a passivatio
Autor:
Shiou-Ying Cheng, Wei-Cheng Chen, Ching-Hong Chang, Der-Feng Guo, Yi-Chun Chan, Chi-Hsiang Hsu, Wen-Chau Liu, Jian-Kai Liou
Publikováno v:
IEEE Transactions on Electron Devices. 64:1134-1139
A hybrid SiO2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antire
Autor:
Huey-Wen Liang, Yi-Chun Chan, Huang-Ju Liang, Szu-Fen Huang, Hsin-Yu Yu, Jih-Shuin Jerng, Jui-Sheng Sun
Publikováno v:
Critical Care
Critical Care, Vol 22, Iss 1, Pp 1-12 (2018)
Critical Care, Vol 22, Iss 1, Pp 1-12 (2018)
Background The management of complaints in the setting of intensive care may provide opportunities to understand patient and family experiences and needs. However, there are limited reports on the structured application of complaint analysis tools an
Autor:
Chun Chih Kuo, Horng-Chih Lin, Kow-Ming Chang, Ming Jinn Tsai, Wen Hsien Tzeng, Frederick T. Chen, Kou-Chen Liu, Yi Chun Chan, Chia Wen Zhong, Pang-Shiu Chen, Heng Yuan Lee
Publikováno v:
Surface and Coatings Technology. 231:563-566
In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfO x /TiN capacitor structure is investigated. Switching parameters, including set and reset voltage v
Autor:
Chun Chih Kuo, Horng-Chih Lin, Heng Yuan Lee, Chia Wen Zhong, Kow-Ming Chang, Wen Hsien Tzeng, Feng-Yu Tsai, Ming Hong Tseng, Yi Chun Chan, Kou-Chen Liu, Pang-Shiu Chen, Frederick T. Chen, Ming Jinn Tsai
Publikováno v:
Thin Solid Films. 520:3415-3418
A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/…/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics
Publikováno v:
Microelectronic Engineering. 88:1586-1589
A transparent resistive random access memory based on ITO/Gd"2O"3/ITO capacitor structure is fabricated on glass substrate. The transparent memory exhibits reliable resistive switching for more than 1000 cycles, low operation voltage of -2V/+2V, and