Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yew Tuck Chow"'
Autor:
Joanna Wasyluk, Andreas Dietel, Yew Tuck Chow, Joerg Schoenekess, Carsten Reichel, Thorsten Kammler
Publikováno v:
Solid-State Electronics. 110:14-18
Batch epitaxy has been introduced for high volume manufacturing of SiGe channels in order to reduce the cost for this epitaxial process by a factor of 3. Beside cost, SiGe channel deposition by batch epitaxy offers many benefits for manufacturing. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddf098882c4700938f57f79a3d2fddfe
https://doi.org/10.1016/j.sse.2015.01.018
https://doi.org/10.1016/j.sse.2015.01.018
Autor:
Yew Tuck Chow, Yi Wanbing, Chin Chuan Neo, Francis Poh, Sarin A. Deshpande, Yi Jiang, Bharat Bhushan, Juan Boon Tan, Kah Wee, Kerry Joseph Nagel, Sanjeev Aggarwal, Moazzem Hossain, Wang Zhehui, Ju Dy, Danny Pak-Chum Shum, Guoqing Lin
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
We present the first exploratory low temperature, lower than standard back-end-of-line (BEOL) interconnects temperature in CMOS. The approach poses several challenges such as undercut in pad via, photo resist residue defects post Aluminum (Al) etch a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5acef7f653d4bcfb5b43d6c8d1db2f92
https://doi.org/10.1109/iitc-amc.2017.7968956
https://doi.org/10.1109/iitc-amc.2017.7968956
Autor:
H.-J. Chia, Frederick B. Mancoff, Seung-Mo Noh, Jijun Sun, G. Shimon, Yew Tuck Chow, Michael Tran, J. Janesky, Syed M. Alam, M. DeHerrera, Jon M. Slaughter, Sarin A. Deshpande, Taiebeh Tahmasebi, Ming-Wei Lin, M. Hossain, Thomas Andre, Francis Poh, C. C. Wang, Renu Whig, Danny Pak-Chum Shum, S. K. Ye, Yi Jiang, Hong-xi Liu, Sumio Ikegawa, Sanjeev Aggarwal, J. H. Lee, Kerry Joseph Nagel
Publikováno v:
2017 IEEE International Magnetics Conference (INTERMAG).
First-generation MRAM, based on a field switching innovation called “Savtchenko switching,” is mass produced by Everspin in densities up to 16Mb.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2262e769d5cb547dc58936a326ce10b
https://doi.org/10.1109/intmag.2017.8007929
https://doi.org/10.1109/intmag.2017.8007929
Autor:
Ming-Wei Lin, M. Hossain, Sumio Ikegawa, Yew Tuck Chow, J. H. Lee, H.-J. Chia, M. DeHerrera, J. Janesky, Renu Whig, C. C. Wang, Kerry Joseph Nagel, Jon M. Slaughter, Francis Poh, Sarin A. Deshpande, Frederick B. Mancoff, Syed M. Alam, Hong-xi Liu, Seung-Mo Noh, Sanjeev Aggarwal, Yi Jiang, S. K. Ye, J. J. Sun, Taiebeh Tahmasebi, Danny Pak-Chum Shum, Thomas Andre, G. Shimon, Michael Tran
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
In this paper we present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ee92fcd34654d549eb37973e0c6c9d
https://doi.org/10.1109/iedm.2016.7838467
https://doi.org/10.1109/iedm.2016.7838467
Autor:
J.H. Kim, S. Lup, C.W. Yap, Juan Boon Tan, Fan Zhang, N. Do, T.L. Chang, Y. J. Kong, Tiwari Vipin, L. Q. Luo, R. Long, Danny Pak-Chum Shum, J.Q. Liu, Khee Yong Lim, Cai Xinshu, A. Yeo, B.B. Zhou, Daxiang Wang, Parviz Ghazavi, Yew Tuck Chow, Zhiqiang Teo
Publikováno v:
2015 IEEE International Memory Workshop (IMW).
This paper successfully demonstrates a functional and reliable self-aligned, split-gate NVM cell, down to a very competitive and small cell size. This NVM cell is embedded into a 40 nm Low Power (LP) ground rule logic process with copper low-K interc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ecb8815c95c30ccf2033cbe58a8f9db
https://doi.org/10.1109/imw.2015.7150288
https://doi.org/10.1109/imw.2015.7150288
Autor:
Reichel, Carsten, Schoenekess, Joerg, Dietel, Andreas, Wasyluk, Joanna, Yew Tuck Chow, Kammler, Thorsten
Publikováno v:
2014 7th International Silicon-Germanium Technology & Device Meeting (ISTDM); 2014, p53-54, 2p