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pro vyhledávání: '"Yew Huang Lau"'
Publikováno v:
2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).
In modern CMOS technologies, interconnect or metallization reliability is part of an assessment for process robustness of the vias and aluminium metal lines. Typically these tests - Electromigration and Stressmigration occurs during process or techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::731d18ac930f03a5d26c6b6846663264
https://doi.org/10.1109/rsm52397.2021.9511609
https://doi.org/10.1109/rsm52397.2021.9511609
