Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Yew Heng Tan"'
Autor:
Kwang Hong Lee, Shuyu Bao, Gang Yih Chong, Yew Heng Tan, Eugene A. Fitzgerald, Chuan Seng Tan
Publikováno v:
APL Materials, Vol 3, Iss 1, Pp 016102-016102-7 (2015)
A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a
Externí odkaz:
https://doaj.org/article/b99584ca49c642959e841d818bc1f970
Publikováno v:
AIP Advances, Vol 3, Iss 9, Pp 092123-092123-7 (2013)
The quality of germanium (Ge) epitaxial film grown directly on a silicon (Si) (001) substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD) system is studied. The growth sequence consists
Externí odkaz:
https://doaj.org/article/1dd0f075e144463192536f6992004545
Autor:
Kwang Hong Lee, Shuyu Bao, Gang Yih Chong, Yew Heng Tan, Fitzgerald, Eugene A., Chuan Seng Tan
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 10, p1-5, 5p, 1 Color Photograph, 2 Black and White Photographs, 5 Graphs
Autor:
Diing Shenp Ang, Kwang Hong Lee, Yao-Jen Chang, Kwang Sing Yew, Yew Heng Tan, Kuan-Neng Chen, Eugene A. Fitzgerald, Chuan Seng Tan
Publikováno v:
IEEE Transactions on Electron Devices. 60:56-62
The quality of germanium (Ge) epitaxial film grown directly on silicon (Si) substrate is investigated based on the electrical properties of a metal-oxide-semiconductor capacitor (MOSCAP). Different thermal cycling temperatures are used in this study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97912b0a11294136312f45903b6e143c
https://doi.org/10.1109/ted.2012.2225149
https://doi.org/10.1109/ted.2012.2225149
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P117-P122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b720e1d21fb68b26a84ddf4b87b75126
https://doi.org/10.1149/2.001203jss
https://doi.org/10.1149/2.001203jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P18-P22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6f1f376ad85911f91470c833775a8f3
https://doi.org/10.1149/2.017201jss
https://doi.org/10.1149/2.017201jss
Autor:
Gang Yih Chong, Chuan Seng Tan, Yew Heng Tan, Shuyu Bao, Kwang Hong Lee, Eugene A. Fitzgerald
Publikováno v:
Fitzgerald
APL Materials, Vol 3, Iss 1, Pp 016102-016102-7 (2015)
APL Materials, Vol 3, Iss 1, Pp 016102-016102-7 (2015)
A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8533b015a5349a2fd1461ae308729752
https://orcid.org/0000-0002-1891-1959
https://orcid.org/0000-0002-1891-1959
Autor:
Kwang Hong Lee, Yew Heng Tan, Chuan Seng Tan, Shuyu Bao, Gang Yih Chong, Eugene A. Fitzgerald
Publikováno v:
2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).
The GOI substrate is fabricated through buffer-less epitaxy (the growth of Ge on Si), bonding and layer transfer. The misfit dislocations which are previously “buried” along the Ge/Si interface are now accessible from the top surface. Through TDD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f437f5d96e4b5470a0a59fe4b18ab6e2
https://doi.org/10.1109/istdm.2014.6874660
https://doi.org/10.1109/istdm.2014.6874660
Autor:
Chuan Seng Tan, Shuyu Bao, Kwang Hong Lee, Eugene A. Fitzgerald, Yew Heng Tan, Gang Yih Chong
A scalable method to fabricate germanium on insulator (GOI) substrate through epitaxy, bonding, and layer transfer is reported. The germanium (Ge) epitaxial film is grown directly on a silicon (Si) (001) donor wafer using a “three-step growth” ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad58094c0de1c52c8f31bbba5801eab5
Publikováno v:
Springer US
The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0° and 6° offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6° offcut presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f745c6be6f2a6940b2e6191054832e69
http://hdl.handle.net/1721.1/105856
http://hdl.handle.net/1721.1/105856