Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yeur-Luen Tu"'
Autor:
Alexander Kalnitsky, Huang Shih-Fen, Benior Chen, Hu Fan, Terrence Yu, Sean Cheng, Leo Tsai, Lin Anderson, Victor Shih, Vincent Teng, Yeur-Luen Tu, Lin You-Ru, Huang Fu-Chun, Yi-Heng Tsai, Ching-Hui Lin, Julian Lee, Lee-Chuan Tseng, Chen Yen-Wen, Liao Yan-Jie, Ching-Hua Chiu, Kelvin Tai, Chih-Ming Chen, Chang Kai-Fung
Publikováno v:
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII).
This work presents the piezoelectric process technology developed in a high volume foundry for emerging MEMS applications. Innovative reliability enhancement techniques for piezoelectric devices are demonstrated to significantly boost (1) dielectric
Autor:
Chih-Hsin Yu, Chib-Yang Pai, Chi-San Wu, Chia-Shiung Tsai, Yeur-Luen Tu, Liou Yuan-Hung, Min-Hwa Chi, Yu-Shen Chen
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 15:478-485
In this paper, the mechanism, inspection, and inline monitor of plasma charging defects found in an active area (AA) corner and edge using a poly-buffer (PB) STI process is reported. These defects are formed by the arcing (or discharging) through wea
Autor:
W.P. Mo, S. Takahashi, R.J. Lin, Kuo-Ching Huang, Gene. Hung, C.C. Chuang, Jhy-Jyi Sze, S.Y. Chen, F.J. Shiu, R.L. Lee, Jeng-Shyan Lin, Chung Wang, S. G. Wuu, W.I. Hsu, Chia-Shiung Tsai, Yeur-Luen Tu, D.N. Yaung, H.Y. Cheng, S.J. Tsai, T.H. Hsu, W.H. Wu, Y.P. Chao, S.T. Tsai, Wen-De Wang, Jen-Cheng Liu, Ta-Wei Wang, Chi-Chuan Wang
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
This paper demonstrates an advanced 1.1um pixel backside illuminated CMOS image sensor with a 3D stacked architecture. The carrier wafer in conventional BSI is replaced by ASIC wafer, which contains a part of periphery circuit and is connected to the
Autor:
Chung S. Wang, Yeur-Luen Tu, Hung-Cheng Sung, Wen-Ting Chu, Yung-Tao Lin, Yu-Hsiung Wang, Hao-Hsiung Lin, Chia-Ta Hsieh, Chia-Shiung Tsai
Publikováno v:
IEEE Electron Device Letters. 25:616-618
In the split-gate flash memory process, during poly oxidation, the bird's beak encroaches under the SiN film, especially along the poly grain boundary, and that will cause nonuniform floating-gate (FG) spacing, even bridging, which is an obstacle to
Autor:
Chi-Chuan Wang, F. Ramberg, H. Rhodes, Jen-Cheng Liu, Calvin Yi-Ping Chao, Dyson H. Tai, Vincent Venezia, Shou-Gwo Wuu, Candace Su-Jung Tsai, Dun-Nian Yaung, Wen-De Wang, C.C. Chuang, W.P. Mo, Tzu-Hsuan Hsu, B.C. Hsieh, Ta-Wei Wang, Yeur-Luen Tu
Publikováno v:
2011 International Electron Devices Meeting.
Backside Illumination (BSI) sensor with excellent optical performance has become the main-stream CMOS image sensor process. This work addressed the key factors and issues for 300mm BSI technology, including wafer distortion, silicon thickness variati
Autor:
P.S. Chou, Shou-Gwo Wuu, T.H. Hsu, K.Y. Chou, F. L. Hsueh, H.Y. Tu, Yeur-Luen Tu, Luan Tran, Tseng Chien-Hsien, Y.P. Chao, R.S. Hsiao, Chi-Chuan Wang, B.C. Hseih, Chia-Shiung Tsai, S. Takahashi, R.J. Lin
Publikováno v:
2010 International Electron Devices Meeting.
This paper presents process breakthroughs that enable a BSI 0.9µm pixel formation and its performance. The technology was developed using 300mm bulk silicon starting wafers with the state-of-the-art tool set for BSI sensor processing. This is the fi
Autor:
J.Y.-C. Sun, L.L. Chao, D. Wu, Candace Su-Jung Tsai, Chia-Hui Lin, H.L. Lin, Chih-Hui Huang, Chi-Chuan Wang, Yeur-Luen Tu
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
In this paper, we report high-k MiM capacitors including Ta/sub 2/O/sub 5/, TaO/sub x/N/sub y/, HfO/sub 2/, Al/sub 2/O/sub 3/ and Ta/sub 2/O/sub 5//Al/sub 2/O/sub 3/ stack layer integrated in 0.13 /spl mu/m 8-level Cu-metallization technology using C
Autor:
Wen-Ting Chu, Hao-Hsiung Lin, Yeur-Luen Tu, Yu-Hsiung Wang, Chia-ta Hsieh, Hung-Cheng Sung, Yung-Tao Lin, Chia-Shiung Tsai, Wang, Chung S.
Publikováno v:
IEEE Electron Device Letters; Sep2004, Vol. 25 Issue 9, p616-617, 3p, 4 Diagrams, 2 Graphs