Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Yeu-Jent Hu"'
Publikováno v:
Optica Applicata. 2012, Vol. 42 Issue 1, p215-221. 7p.
Publikováno v:
Thin Solid Films. 519:6069-6072
We demonstrate that InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with micro-hole arrayed indium-tin-oxide layers exhibit better performance and optoelectrical properties than do conventional LEDs. Under 20 mA injection current operati
Publikováno v:
Microelectronics Reliability. 50:1107-1110
The optical characterization of excitons coupled with surface plasmon resonance (SPR) for InGaN/GaN heterostructures with perforated cylindrical micropillar arrays is investigated. We analyze the optical characteristics of excitons coupled with SPR f
Publikováno v:
Journal of Luminescence. 130:1000-1004
The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optic
Autor:
Tzer-En Nee, Ya-Fen Wu, Yeu-Jent Hu, Jia-Hui Fang, Jiunn-Chyi Lee, Hui-Tang Shen, Jen-Cheng Wang
Publikováno v:
The European Physical Journal Applied Physics. 38:21-25
We investigate the temperature dependence of photoluminescence (PL) properties of InAs/GaAs quantum dot (QD) heterostructures. The temperature dependence of the InAs exciton energy and linewidth is found to display a significant difference due to the
Publikováno v:
IEEE Transactions on Industrial Electronics. 52:1364-1371
In this paper, an indirect field-oriented control (FOC) induction motor (IM) drive with instantaneous current and torque control is presented. This proposed control scheme employs hysteresis current and torque controllers to regulate the stator curre
Autor:
Kung-Yu Cheng, Nie-Chuan Chen, Ya-Fen Wu, Chia-Hui Fang, Jen-Cheng Wang, Jiunn-Chyi Lee, Gwo-Mei Wu, Tzer-En Nee, Yeu-Jent Hu
Publikováno v:
Japanese Journal of Applied Physics. 47:679-681
We studied the unique correlations between the electrical and optical characteristics of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with n-AlGaN layer and n-InGaN/GaN superlattice electron tunneling layer (ETL). It was found t
Publikováno v:
Journal of Optics. 25:133-146
A new methodology is developed for detecting the fringes of an interferometer. In the binary pattern, a new saving-deletion rule is utilized to extract the fringe skeletons from the original pattern. The method is applicable to any orientation of the
Publikováno v:
SPIE Proceedings.
We introduce a structure of multi-quantum barriers (MQBs) into the multi-quantum well (MQW) heterostructures to improve the performance in light-emitting diodes. The InGaN/GaN MQW LEDs with and without MQBs were prepared by metal-organic vapor phase
Publikováno v:
SPIE Proceedings.
A novel light-emitting diode backlight module applied in liquid crystal displays is demonstrated. With microgrooves on the bottom surface and diffusive dots on the upper surface of the light guide plate (LGP), most of the incident backlight is utiliz