Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yeting Jia"'
Publikováno v:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
In this paper, a theoretical study of p-GaN/AlxGa1-xN/GaN heterostructures is conducted systematically. In order to efficiently deplete the two-dimensional electron gas (2DEG) at the lower AlxGa1-xN/GaN interface and to achieve a reasonable threshold
Publikováno v:
Solid-State Electronics. 146:1-8
In this paper, a novel eight-parameter empirical nonlinear current-voltage (I-V) model for gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A hyperbolic sine function is introduced in this model to describe the transfer
Autor:
Jiang Lijuan, Qian Wang, Quan Wang, Wei Li, Changxi Chen, Xiangang Xu, Chun Feng, Hongling Xiao, Yeting Jia, Xiaoliang Wang
Publikováno v:
physica status solidi (a). 218:2100151
Autor:
Jiang Lijuan, Yeting Jia, Peisen Cheng, Chun Feng, Wei Li, Quan Wang, Xiaoliang Wang, Hongling Xiao, Zhichao Liu
Publikováno v:
Electronics, Vol 10, Iss 311, p 311 (2021)
Electronics
Volume 10
Issue 3
Electronics
Volume 10
Issue 3
This paper proposes a broadband asymmetrical monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) using 0.25-μm gallium-nitride process with a compact chip size of 2.37 × 1.86 mm2 for 5G communication. It adopts an unequal W