Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yeting Jia"'
Publikováno v:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
In this paper, a theoretical study of p-GaN/AlxGa1-xN/GaN heterostructures is conducted systematically. In order to efficiently deplete the two-dimensional electron gas (2DEG) at the lower AlxGa1-xN/GaN interface and to achieve a reasonable threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e0fc7c88d1aa3375f2a09a3fed0e597
https://doi.org/10.1109/sslchinaifws51786.2020.9308764
https://doi.org/10.1109/sslchinaifws51786.2020.9308764
Publikováno v:
Solid-State Electronics. 146:1-8
In this paper, a novel eight-parameter empirical nonlinear current-voltage (I-V) model for gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A hyperbolic sine function is introduced in this model to describe the transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8017493ffb1bbfbbfcc1d24f9d6377cd
https://doi.org/10.1016/j.sse.2018.04.004
https://doi.org/10.1016/j.sse.2018.04.004
Autor:
Jiang Lijuan, Qian Wang, Quan Wang, Wei Li, Changxi Chen, Xiangang Xu, Chun Feng, Hongling Xiao, Yeting Jia, Xiaoliang Wang
Publikováno v:
physica status solidi (a). 218:2100151
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a21d025ae9e572d3933302bfae8af6
https://doi.org/10.1002/pssa.202100151
https://doi.org/10.1002/pssa.202100151
Autor:
Jiang Lijuan, Yeting Jia, Peisen Cheng, Chun Feng, Wei Li, Quan Wang, Xiaoliang Wang, Hongling Xiao, Zhichao Liu
Publikováno v:
Electronics, Vol 10, Iss 311, p 311 (2021)
Electronics
Volume 10
Issue 3
Electronics
Volume 10
Issue 3
This paper proposes a broadband asymmetrical monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) using 0.25-μm gallium-nitride process with a compact chip size of 2.37 × 1.86 mm2 for 5G communication. It adopts an unequal W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47064c2c3cd5be316f5c9a561ba30bee
https://doi.org/10.3390/electronics10030311
https://doi.org/10.3390/electronics10030311
Autor:
Jia, Yeting, Wang, Quan, Chen, Changxi, Feng, Chun, Li, Wei, Jiang, Lijuan, Xiao, Hongling, Wang, Qian, Xu, Xiangang, Wang, Xiaoliang
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; Sep2021, Vol. 218 Issue 18, p1-10, 10p
Autor:
Cheng, Peisen, Wang, Quan, Li, Wei, Jia, Yeting, Liu, Zhichao, Feng, Chun, Jiang, Lijuan, Xiao, Hongling, Wang, Xiaoliang, Pinhasi, Yosef
Publikováno v:
Electronics (2079-9292); 2/1/2021, Vol. 10 Issue 3, p311-311, 1p
Autor:
Robert Stahlbush, Philip G. Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars J. Lelis
ICSCRM 2017Selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA
