Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Yeow Whatt Goh"'
Publikováno v:
Applied Physics A. 77:433-439
Aluminium nitride (AlN) thin films have been grown on Si(100), Si(111) and Sapphire Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of an AlN target with the assistance of nitrogen-ion-beam bombardment.
Publikováno v:
Applied Surface Science. :269-275
The species distribution and evolution in laser induced plasma are optically studied by using time-of-flight spectra extracted from time-resolved spectra and newly introduced space-of-flight spectra extracted from space-resolved spectra. The plasma c
Publikováno v:
Photon Processing in Microelectronics and Photonics V.
We are proposing a method and system to mount and treat the surface of a fabricated micro-component to improve its tribological performance. By irradiating an infrared laser under ambient conditions, the heat will penetrate the micro-component's surf
Publikováno v:
SPIE Proceedings.
Lithium Niobate is an important material in optical communication due to its special characteristics (high electrooptic coefficients and high optical transparency in the near infrared wavelengths). In this paper, we investigated the effects of 775-nm
Autor:
Dongjiang Wu, P. Luo, Y. Lin, Weijie Wang, Yeow Whatt Goh, Tow Chong Chong, Boris Luk'yanchuk, Yongfeng Lu, Minghui Hong
Publikováno v:
Fourth International Symposium on Laser Precision Microfabrication.
We have developed the laser nanoprocessing technique by the integration of the ultrafast laser and near-field scanning microscopy (NSOM). The second harmonic femtosecond laser working in the optical near-field with the assistance of NSOM equipment wa
Publikováno v:
SPIE Proceedings.
In recent years, femtosecond (fs) laser ablation has attracted much interest in both basic and applied physics, mainly because of its potential application in micromachining and pulsed laser deposition. Ultrashort laser ablation have the capability t
Publikováno v:
SPIE Proceedings.
Aluminum nitride (AIN) thin films have been grown on Si(111) and Al 2 O 3 (001) substrates by pulsed KrF excimer laser (wavelength 248nm, duration 30ns) ablation of AIN target with assistance of nitrogen ion beam bombardment. The influence of process
Publikováno v:
SPIE Proceedings.
Laser induced temporary degeneration of transmissivity in optical materials has been observed under strong laser irradiation. In the experiment, a green light laser beam was focused onto a transparent sample, an ultra fast photo-tube was used to dete
Autor:
B. A. Cheong, Yongfeng Lu, Tow Chong Chong, Yeow Whatt Goh, H. Q. Ni, Jian-Ping Wang, S. K. Chow, Z. M. Ren
Publikováno v:
SPIE Proceedings.
Aluminium nitride thin films were deposited at room temperature on silicon substrates by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target. A KrF excimer laser with pulse duration of 23 ns and wavelength of 248 nm was used as a la
Publikováno v:
SPIE Proceedings.
Pulsed green laser with 532 nm wavelength and 270 ns pulse duration was first time used to produce a textured zone on a Ni-P disk substrate. Combining a so-called tip-writing method, typical small bumps of interest with bump diameter around 3 μm and