Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yeonmi Ryoo"'
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12a2804511857452b9e74d6b9aef92ff
https://doi.org/10.7567/ssdm.2012.ps-6-13
https://doi.org/10.7567/ssdm.2012.ps-6-13
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce4d50335e848b77805344d6277c3d39
https://doi.org/10.7567/ssdm.2011.p-2-7
https://doi.org/10.7567/ssdm.2011.p-2-7
Publikováno v:
Semiconductor Science and Technology. 28:045012
Since the high thermal resistance of InGaAs metamorphic high electron mobility transistors (MHEMTs) limits their applicability, thermal management should be taken into account when designing the device structure. In this study, structural effects on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cce3dbe195439ff49bfbf49706d9ee32
https://doi.org/10.1088/0268-1242/28/4/045012
https://doi.org/10.1088/0268-1242/28/4/045012
Publikováno v:
Electronics Letters. 47:725
Sharp edge definition of annealed ohmic contacts is of great concern in AlGaN/GaN high electron mobility transistors (HEMTs) because it is strongly associated with breakdown voltage uniformity and reliability. In this reported work, two-step sequenti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e16a32d3a20f8f33dab9f4da83a2f4f0
https://doi.org/10.1049/el.2011.1190
https://doi.org/10.1049/el.2011.1190