Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yeongkwang Cho"'
Autor:
Lei Xu, Kihong Park, Hong Lei, Pengzhan Liu, Eungchul Kim, Yeongkwang Cho, Taesung Kim, Chuandong Chen
Publikováno v:
Friction, Vol 11, Iss 9, Pp 1624-1640 (2023)
Abstract The material loss caused by bubble collapse during the micro-nano bubbles auxiliary chemical mechanical polishing (CMP) process cannot be ignored. In this study, the material removal mechanism of cavitation in the polishing process was inves
Externí odkaz:
https://doaj.org/article/8643f077f9bc4648adb74a5e848d7c3a
Autor:
Yeongkwang Cho, Pengzhan Liu, Sanghuck Jeon, Jungryul Lee, Sunghoon Bae, Seokjun Hong, Young Hwan Kim, Taesung Kim
Publikováno v:
Applied Sciences, Vol 12, Iss 9, p 4339 (2022)
Slurry flow on the pad surface and its effects on oxide chemical mechanical polishing (CMP) performance were investigated in simulations and experiments. A concentric groove pad and the same pad with radial grooves were used to quantitatively compare
Externí odkaz:
https://doaj.org/article/62675f11ee2d4c269fdb12f54d496d4e
Autor:
Yeongkwang Cho, Hong Lei, Taesung Kim, Jae-Won Lee, Lei Xu, Pengzhan Liu, Eungchul Kim, Sanghyun Park, Kihong Park
Publikováno v:
Precision Engineering. 74:20-35
Silicon dioxide is the most important gate oxide dielectric material, and its surface planarization is an important factor in the continuous shrinking of the size of integrated circuits. Developing a novel chemical mechanical polishing auxiliary tech
Autor:
Yeongkwang Cho, Sanghuck Jeon, Jungryul Lee, Taesung Kim, Hyeonmin Seo, Kihong Park, Pengzhan Liu, Seokjun Hong
Publikováno v:
Materials Science in Semiconductor Processing. 138:106280
In this paper, tribological effects on the material removal rate (MRR) are investigated using two types of slurry abrasives (i.e., ceria and silica) and three types of pads. From a micro to macro viewpoint, the physico-chemical interaction between th