Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yeongeun Park"'
Autor:
Chaeyun Kim, Hyowon Yoon, Yeongeun Park, Sangyeob Kim, Gyuhyeok Kang, Dong-Seok Kim, Ogyun Seok
Publikováno v:
Micromachines, Vol 15, Iss 4, p 496 (2024)
We investigated the effects of gate bias regarding the degradation of electrical characteristics during gamma irradiation. Moreover, we observed the punch through failure of 1.2 kV rated commercial Silicon Carbide (SiC) Metal Oxide Semiconductor Fiel
Externí odkaz:
https://doaj.org/article/f8d404f7925442bd80ad9b82f646981c
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 71:1646-1650
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8f6b162d081ed41ffea070c4216abea
https://doi.org/10.5370/kiee.2022.71.11.1646
https://doi.org/10.5370/kiee.2022.71.11.1646
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 71:871-875
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10dbc33e156226d8370cd449eef5fead
https://doi.org/10.5370/kiee.2022.71.6.871
https://doi.org/10.5370/kiee.2022.71.6.871
Publikováno v:
Japanese Journal of Applied Physics. 62:011001
In this study, the effect of applying the tilted ion implantation process of a 1.2 kV SiC trench metal–oxide–semiconductor field-effect transistor on the electrical characteristics of the devices was investigated. P-shielding with tilted ion impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d264391b9bb3e52eee5c4078a5ad20
https://doi.org/10.35848/1347-4065/acaadf
https://doi.org/10.35848/1347-4065/acaadf