Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Yeong-Shyang Lee"'
Autor:
Yeong-Shyang Lee, 李永祥
88
The characteristics of hydrogenated microcrystalline silicon thin-film transistors (TFTs) with low-high-low band gap structures have been investigated. The various thin films including high-quality hydrogenated microcrystalline silicon (mc-Si
The characteristics of hydrogenated microcrystalline silicon thin-film transistors (TFTs) with low-high-low band gap structures have been investigated. The various thin films including high-quality hydrogenated microcrystalline silicon (mc-Si
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/07093830555780779380
Publikováno v:
Journal of Materials Science: Materials in Electronics. 21:270-277
In this paper, highly crystallized silicon films can be obtained by using a new metal-mediated mechanism. In this method, the infrared radiation was absorbed by a reusable metal-coated plate and then the photon energy was converted into heat. The tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::051762b14c86e2fecb0b9bfd53a3fc47
https://doi.org/10.1007/s10854-009-9904-5
https://doi.org/10.1007/s10854-009-9904-5
Autor:
Kuo Hsi Yen, Jenn-Fang Chen, Ching Chieh Shih, Yeong Shyang Lee, Ming Ta Hsieh, Hsiao-Wen Zan, Chih Hsien Chen, Chan Ching Chang
Publikováno v:
Japanese Journal of Applied Physics. 47:8714-8718
Detailed admittance spectroscopy was performed on a metal–silicon nitride–hydrogenated amorphous silicon (MIAS) structure. On the basis of the properties of hydrogenated amorphous silicon (a-Si:H), three simplified equivalent circuit models under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e8f827c3c2460aafd1f931423dda301
https://doi.org/10.1143/jjap.47.8714
https://doi.org/10.1143/jjap.47.8714
Publikováno v:
Japanese Journal of Applied Physics. 47:4426-4429
In this paper, we proposed a novel technique to crystallize amorphous silicon films. A crystallized silicon film shows smooth surface and good crystallinity. Crystallization was conducted by a mechanism utilizing an energy-assisted agent. In this tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6da1661eddb999377a054cf177464e3
https://doi.org/10.1143/jjap.47.4426
https://doi.org/10.1143/jjap.47.4426
Publikováno v:
Journal of Materials Science: Materials in Electronics. 20:301-304
A porous silicon structure with good physical and optical characteristics was made by a novel method. In this method, an amorphous silicon film with many fine grains was used as micro-mask. When the sample was subjected to etching process, the presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1adbd21db9bdfd9cd8c032dd6e46076
https://doi.org/10.1007/s10854-008-9724-z
https://doi.org/10.1007/s10854-008-9724-z
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 7:347-350
We have studied the time-dependence degradation of ON current of amorphous silicon thin-film transistors (a-Si:H TFTs), which is a function of stress duration, stress temperature, and stress bias. A simple method with stretched-exponential equation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce4525b4227e0cf383d1c643065c684
https://doi.org/10.1109/tdmr.2007.901068
https://doi.org/10.1109/tdmr.2007.901068
Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide
Publikováno v:
Japanese Journal of Applied Physics. 46:2887-2891
A new plasma treatment method was proposed to improve silicon oxide films. The improvement of the films was attributed to the introduction of oxygen atoms, which were extracted from self-biased nitrous oxide plasma. The introduced oxygen atoms decrea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b66c842b513f9f42a912869c3cd8aa50
https://doi.org/10.1143/jjap.46.2887
https://doi.org/10.1143/jjap.46.2887
Publikováno v:
Journal of Materials Science: Materials in Electronics. 18:475-480
The large-grain crystallization for silicon film was implemented by doping germanium in silicon film and using a rapid thermal process with near-infrared illumination. Germanium atoms acted as nuclei for crystallization of the amorphous silicon film.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51082b111377c019cfa413b99c154c9b
https://doi.org/10.1007/s10854-006-9066-7
https://doi.org/10.1007/s10854-006-9066-7
The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
Publikováno v:
Materials Chemistry and Physics. 62:153-157
The effects of hydrogenated microcrystalline silicon (μc-Si:H) film with various crystalline factors on thin-film transistors (TFTs) with low-high-low band gap structure are studied. Compared to hydrogenated amorphous silicon (a-Si:H) TFT with conve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68dcc348503bf4b4e0d63b7f350345b1
https://doi.org/10.1016/s0254-0584(99)00174-1
https://doi.org/10.1016/s0254-0584(99)00174-1
Publikováno v:
Journal of Physics and Chemistry of Solids. 69:645-647
In this paper, low-temperature deposited microcrystalline silicon (μc-Si) was applied to make a high-performance thin film transistor (TFT). The a-Si film is used as a carrier-blocking layer inserted into μc-Si TFT for suppressing unwanted OFF-stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c997e78cdae1295ba87f32438627bcfd
https://doi.org/10.1016/j.jpcs.2007.07.120
https://doi.org/10.1016/j.jpcs.2007.07.120