Zobrazeno 1 - 10
of 76
pro vyhledávání: '"Yeong-Seuk Kim"'
Publikováno v:
Journal of the Korea Institute of Information and Communication Engineering. 21:345-352
Publikováno v:
Journal of the Korea Institute of Information and Communication Engineering. 20:1303-1310
Publikováno v:
Transactions on Electrical and Electronic Materials. 16:254-259
Publikováno v:
ETRI Journal. 37:961-971
This paper proposes a 250mV supply-voltrage digital low-dropout (LDO) regulator. The proposed LDO regulator reduces the supply voltage to 250mV by implementing with all digital circuits in a 0.11μm CMOS process. The fast current tracking scheme achi
Publikováno v:
Solid-State Electronics. 103:98-103
This paper presents the geometric effects of a lateral asymmetric channel (LAC) structure for high-voltage (HV) MOSFETs. The LAC structure was adopted to enhance the device performance by modifying the potential distribution in the channel and reduci
Publikováno v:
2017 International Conference on Circuits, System and Simulation (ICCSS).
This paper presents a dual-mode DC-DC buck converter using power transistor width scaling (PTWS) with a zero current detector to improve power efficiency under light load. The buck converter is operated in a dual mode, combining the switching frequen
Publikováno v:
Solid-State Electronics. 100:49-53
This paper presents the electrical characteristics of high-voltage (HV) extended-drain MOS (EDMOS) field-effect transistor with dual-workfunction-gate (DWFG) to enhance the device performance and device optimization for mixed-signal applications. For
Publikováno v:
IEEE Transactions on Electron Devices. 61:2250-2256
An n-channel MOSFET with lateral asymmetric substrate doping (LASD) is presented in this paper. The proposed LASD device has a p-well on the source side and a p-substrate on the drain side. The LASD MOSFET was designed by the simple p-well layout app
Publikováno v:
Transactions on Electrical and Electronic Materials. 15:149-154
A new CMOS analog design methodology using an independently optimized self-cascode (SC) is proposed. This idea is based on the concept of the dual-workfunction-gate MOSFETs, which are equivalent to SC structures. The channel length of the source-side
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 13:522-529
In this paper, simple but very effective techniques to suppress subthreshold hump effect for high-voltage (HV) complementary metal-oxidesemiconductor (CMOS) technology are presented. Two methods are proposed to suppress subthreshold hump effect using