Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Yeong-Jia Chen"'
Autor:
Yeong-Jia Chen, 陳永嘉
93
In this dissertation, we have successfully fabricated and investigated InAlAs/InGaAs metamorphic high-electron-mobility transistors (MHEMT’s) by employing different InxGa1-xAs channel structures with varied In compositions. Through the chan
In this dissertation, we have successfully fabricated and investigated InAlAs/InGaAs metamorphic high-electron-mobility transistors (MHEMT’s) by employing different InxGa1-xAs channel structures with varied In compositions. Through the chan
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/58821159170243168240
Autor:
Yeong-Jia Chen, 陳永嘉
88
In this thesis, the doubleδ-doping InGaP/InGaAs heterojuction field-effect transistors (HFET) have been successfully fabricated by low-pressure metalorganic chemical vapor deposition ( LP-MOCVD ) system. There is a large conduction band disc
In this thesis, the doubleδ-doping InGaP/InGaAs heterojuction field-effect transistors (HFET) have been successfully fabricated by low-pressure metalorganic chemical vapor deposition ( LP-MOCVD ) system. There is a large conduction band disc
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/61878494949631972955
Publikováno v:
IEEE Sensors Journal. 11:1194-1200
The hydrogen sensing and response characteristics of a catalytic Pd/GaN metal-semiconductor (MS) Schottky diode are systematically studied in this paper. The current-voltage characteristics, hydrogen detection sensitivity ratios, Schottky barrier hei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c5d6b093a70cca460865720c88a368e
https://doi.org/10.1109/jsen.2010.2084430
https://doi.org/10.1109/jsen.2010.2084430
Publikováno v:
Journal of the Chinese Institute of Engineers. 32:391-396
X‐band gain amplifiers, consisting of a symmetrically‐graded‐channel In0 425 Al0.575As/InxGa1 –xAs (x = 0.5 ?> 0.65 —? 0.5) metamorphic high electron mobility transistor (SGC‐MHEMT) and a pseudomorphic‐channel In0 425Al0 575As/In0 65Ga0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3b7336d75f86b62a596db25ab9d9f3e
https://doi.org/10.1080/02533839.2009.9671519
https://doi.org/10.1080/02533839.2009.9671519
Autor:
Kun-Wei Lin, Jun-Rui Huang, Wen-Chau Liu, Wei-Chou Hsu, Tzong-Bin Wang, Huey-Ing Chen, Yeong-Jia Chen
Publikováno v:
Sensors and Actuators B: Chemical. 117:151-158
The hydrogen sensing characteristics of Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. Experimentally, upon exposing to hydrogen-containing gases, both of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294b0b457e0c077b5b52a19d4d4d46d3
https://doi.org/10.1016/j.snb.2005.11.020
https://doi.org/10.1016/j.snb.2005.11.020
Publikováno v:
IEEE Transactions on Electron Devices. 53:406-412
This paper proposes a $hbox In_0.5hbox Al_0.5$ As/ $hbox In_xhbox Ga_1-xhbox As$break / $hbox In_0.5hbox Al_0.5hbox As$ $(x=0.3-0.5-0.3)$ metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2ab3b77f434c1341e6283ad0b64eae2
https://doi.org/10.1109/ted.2005.863545
https://doi.org/10.1109/ted.2005.863545
Publikováno v:
Solid-State Electronics. 50:291-296
δ-Doped In0.35Al0.65As/In0.35Ga0.65As metamorphic high electron mobility transistor (MHEMT) grown by molecular beam epitaxy (MBE) has been successfully investigated. High power characteristic are achieved due to the improved impact ionization and ki
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0d4693be6c0124032f15e4a6b38cc40
https://doi.org/10.1016/j.sse.2005.12.003
https://doi.org/10.1016/j.sse.2005.12.003
Publikováno v:
Solid-State Electronics. 49:163-166
High-linearity In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b7cd0a9f42acea9bec9b27a3fcbb5e4
https://doi.org/10.1016/j.sse.2004.08.003
https://doi.org/10.1016/j.sse.2004.08.003
Publikováno v:
Solid-State Electronics. 48:119-124
High-linearity In0.52Al0.48As/InxGa1−xAs HEMT’s have been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The studied devices exhibit high transconductance, low leakage current, high breakdown, and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9ecc248adc7fb0d3f06a02f56b72d26
https://doi.org/10.1016/s0038-1101(03)00287-9
https://doi.org/10.1016/s0038-1101(03)00287-9
Publikováno v:
Japanese Journal of Applied Physics. 42:4249-4252
Planar InGaAs(P)/InP p–i–n photodiodes have been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). High-quality and uniform epitaxial layers are obtained. It is noted that the InGaAs layer background conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2df09a1c71c494a7864d6217aa3bd338
https://doi.org/10.1143/jjap.42.4249
https://doi.org/10.1143/jjap.42.4249