Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Yeong-Jae Kwon"'
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Akademický článek
Predictive Factors for Improvement of Atrophic Gastritis and Intestinal Metaplasia: A Long-term Prospective Clinical Study
Autor: Young-Jae Hwang, Nayoung Kim, Chang Yong Yun, Min Gu Kwon, Sung Min Baek, Yeong Jae Kwon, Hye Seung Lee, Jae Bong Lee, Yoon Jin Choi, Hyuk Yoon, Cheol Min Shin, Young Soo Park, Dong Ho Lee
Publikováno v: The Korean Journal of Helicobacter and Upper Gastrointestinal Research, Vol 18, Iss 3, Pp 186-197 (2018)
Background/Aims: To investigate the predictive factors for improvement of atrophic gastritis (AG) and intestinal metaplasia (IM). Materials and Methods : A total of 778 subjects were prospectively enrolled and followed up for 10 years. Histological a
Externí odkaz: https://doaj.org/article/9feaedc772034689827ed4671d845387
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6
Predictive Factors for Improvement of Atrophic Gastritis and Intestinal Metaplasia: A Long-term Prospective Clinical Study
Autor: Cheol Min Shin, Young Soo Park, Dong Ho Lee, Hyuk Yoon, Nayoung Kim, Sung Min Baek, Jaebong Lee, Min Gu Kwon, Yeong Jae Kwon, Young Jae Hwang, Yoon Jin Choi, Chang Yong Yun, Hye Seung Lee
Publikováno v: The Korean Journal of Helicobacter and Upper Gastrointestinal Research, Vol 18, Iss 3, Pp 186-197 (2018)
Background/Aims: To investigate the predictive factors for improvement of atrophic gastritis (AG) and intestinal metaplasia (IM). Materials and Methods : A total of 778 subjects were prospectively enrolled and followed up for 10 years. Histological a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a6b14d342ba48126285bf3a4c1ae089
http://www.helicojournal.org/journal/view.html?doi=10.7704/kjhugr.2018.18.3.186
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8
Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109
Autor: Yeong Jae Kwon, Gun Hwan Kim, Hae Jin Kim, Kyung Jean Yoon, Jung Ho Yoon, Sijung Yoo, Cheol Seong Hwang, Yu Min Kim, Tae Hyung Park, Dae Eun Kwon, Woorham Bae
Publikováno v: Advanced Electronic Materials. 3:1700152
A double-layer-stacked 1 diode-1 resistor (1D1R) cross-bar array (CBA) resistance switching random access memory is fabricated. The TiO2-based Schottky diode and the unipolar resistance switching TiO2 comprise the cell selector and nonvolatile memory
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::52f3244b1a370e8adbd939ec6ab8ca62
https://doi.org/10.1002/aelm.201700152
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9
Double Layers-Stacked 3D 1D1R Crossbar Rram Integrating a Diode Selector with Rectification Ratio of ~109
Autor: Kyung Jean Yoon, Si Jung Yoo, Tae Hyung Park, Yeong Jae Kwon, Dae Eun Kwon, C. S. Hwang
Publikováno v: ECS Meeting Abstracts. :1445-1445
The F2-cell sized 1diode-1resistive switching memory (1D1R) crossbar accompanied by excellent rectifying characteristics is presented. Each diode and memory comprising the 1D1R is fabricated at room temperature, which is optimized for the integration
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::13400d2c415f45ed580dcaf8ee5fd188
https://doi.org/10.1149/ma2016-02/16/1445
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