Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Yeon-Gon Mo"'
Publikováno v:
Journal of Information Display. 12:205-208
Herein, the integration of solution-processed polymer thin-film transistors (TFTs) that were fabricated using selective wettability through ultraviolet (UV) exposure into a reflective liquid crystal display is demonstrated. From the experimental resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46e21eb261a9ab33e4bd45b36a4ab86b
https://doi.org/10.1080/15980316.2011.621319
https://doi.org/10.1080/15980316.2011.621319
Autor:
Kwang Hwan Ji, Rino Choi, Se Yeob Park, Yeon-Gon Mo, Ji-In Kim, Hong Yoon Jung, Jae Kyeong Jeong
Publikováno v:
Microelectronic Engineering. 88:1412-1416
In this paper an examination is presented of the effect of the gate dielectric materials and bilayer stack on the negative bias illumination stress (NBIS) instability of InGaZnO (IGZO) TFTs. The threshold voltage (V"t"h) movement by NBIS was greatly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22480ee7671f88c300b0f622f2398616
https://doi.org/10.1016/j.mee.2011.03.069
https://doi.org/10.1016/j.mee.2011.03.069
Publikováno v:
physica status solidi (a). 208:2231-2234
The effects of high-pressure annealing were investigated using amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The fabricated device annealed at 5 atm in H2O ambient showed the best electrical characteristics and stability under positive bia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2cfdc303660414f67d5ad328e71a61b
https://doi.org/10.1002/pssa.201127243
https://doi.org/10.1002/pssa.201127243
Autor:
Keehan Uh, Yeon-Gon Mo, Chang M. Park, Min-Kyu Kim, Chaun Gi Choi, Yong S. Park, Kwang S. Kim, Sungchul Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 42:472-475
A full-color 14-inch active matrix organic light emitting diode (AMOLED) TV, which does not suffer from the well-known pixel non-uniformity of luminance using a simple pixel circuit design consisting of 3 transistors and 1 capacitor, has been develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fff2e2265a4097d8b6067de15a004e8
https://doi.org/10.1889/1.3621358
https://doi.org/10.1889/1.3621358
MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region
Publikováno v:
Journal of Display Technology. 5:495-500
In this paper, we analyzed electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with plasma-exposed source-drain (S/D) bulk region. The parasitic resistance and effective channel length characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0cd5f43b4b144aede9ac5fa430efea9
https://doi.org/10.1109/jdt.2009.2021490
https://doi.org/10.1109/jdt.2009.2021490
Publikováno v:
Advanced Materials. 21:329-333
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7625a3d9848e4bbfd7f2ad5951953766
https://doi.org/10.1002/adma.200802246
https://doi.org/10.1002/adma.200802246
Autor:
Hui Nam, Hye-Dong Kim, Yeon-Gon Mo, Kim Beom Shik, Ku Ja Seung, Ho Kyoon Chung, Jang Hyoung Wook, Chan-Young Park
Publikováno v:
SID Symposium Digest of Technical Papers. 38:1160-1163
We have developed the stereo-corresponding algorithm using edge information. The conventional stereo-corresponding algorithm, SAD (Sum of Absolute Difference), has a good quality in case of texture region, but it has a false matching in the non-textu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5bee74a8a8d8b1cc3fcd854b66ff909
https://doi.org/10.1889/1.2785515
https://doi.org/10.1889/1.2785515
Autor:
Jong Hyun Choi, Yeon-Gon Mo, Jae Kyeong Jeong, Jun-Bock Jang, Jun Hyuk Cheon, Hyun Soo Shin, Ji Ho Hur, Ho Kyoon Chung
Publikováno v:
IEEE Transactions on Electron Devices. 53:1273-1276
This brief reports a flexible active-matrix organic light-emitting diode display based on a poly-Si thin-film transistor (TFT) backplane. The p-channel poly-Si TFTs on metal foil exhibited a maximum field-effect mobility of 86.1 cm/sup 2//Vs, thresho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ed7398c5aeb7f8adbc4a33ec1cafe88
https://doi.org/10.1109/ted.2006.871873
https://doi.org/10.1109/ted.2006.871873
Autor:
Hye-Dong Kim, Yeon-Gon Mo, Guanghai Jin, Won-Pil Lee, Sang-soo Kim, Jong-Hyun Choi, Jonghyun Song, Moo-Jin Kim
Publikováno v:
IEEE Electron Device Letters. 32:1236-1238
We have successfully fabricated a novel 3-D vertically stacked complementary metal-oxide-semiconductor hybrid inverter using a lower p-type poly-Si thin-film transistor (TFT) and an upper n-type amorphous Ga-In-Zn-O (a-GIZO) TFT. The device was fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5116aa1751878ba0ad9c3bc0fe765824
https://doi.org/10.1109/led.2011.2161258
https://doi.org/10.1109/led.2011.2161258
Publikováno v:
SID Symposium Digest of Technical Papers. 42:25-27
An on-glass integrated scan driver is proposed for oxide thin film transistors TFTs with negative threshold voltage. A coupling capacitor and a TFT for setting the initial voltage to the gate of a TFT were added to minimize the off-state current. Sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a51ecc8e9057fa87a4ea1be60825fcd
https://doi.org/10.1889/1.3621289
https://doi.org/10.1889/1.3621289