Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yeon-Cheol Heo"'
A New Direction for III–V FETs for Mobile CPU Operation Including Burst-Mode: In0.35Ga0.65As Channel
Autor:
S.-C. Baek, Obradovic Borna J, Titash Rakshit, Rita Rooyackers, D. Kim, Wei-E Wang, Nadine Collaert, S. C. Ardila, Jiwon Lee, S.-W. Lee, A. Vais, Yeon-Cheol Heo, W.-H. Kim, D. Lin, Mirco Cantoro, Mark S. Rodder, A. Hoover, K.-M. Shin, W.-B. Song, Sanghyeon Kim
Publikováno v:
IEEE Electron Device Letters. 38:314-317
In this letter, we show that conventional III–V MOSFETs with moderate/high In content channels (In0.53Ga0.47As or In0.70Ga0.30As) at scaled nodes are incompatible with mobile SoC designs, which often operate at intermediate/high ${V_{{\mathrm {dd}}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b9b1b8101ba9d70e95f9c07fffccd9
https://doi.org/10.1109/led.2017.2658447
https://doi.org/10.1109/led.2017.2658447
Autor:
Shigenobu Maeda, Mirco Cantoro, Hyeon-Kyun Noh, Krishna Kumar Bhuwalka, Zhenhua Wu, Uihui Kwon, Seonghoon Jin, Keun-Ho Lee, Yeon-Cheol Heo, Woosung Choi, Won-Sok Lee, Young-Kwan Park
Publikováno v:
IEEE Transactions on Electron Devices. 62:2816-2823
III–V n-channel MOSFETs based on In x Ga1− x As are evaluated for low-power (LP) technology at a sub-10-nm technology node. Aggressive design rules are followed, while industry-relevant FinFET architecture is selected. We show, for the first time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35921f96f53dd145886566d23a9ea02
https://doi.org/10.1109/ted.2015.2445977
https://doi.org/10.1109/ted.2015.2445977
Autor:
Mark S. Rodder, Mong-song Liang, Cheol Kim, Taek-Soo Jeon, Dong-Won Kim, Sunjung Kim, Kittl Jorge A, Jae Hoo Park, Wookje Kim, Jongwook Jeon, Sun-Ghil Lee, Myung-Geun Song, Kab-Jin Nam, Seung-Hun Lee, Yeon-Cheol Heo, Sean Lian, Sang-Woo Lee, Uihui Kwon, Geum-Jong Bae, Dong-il Bae, Kang-ill Seo, Krishna Kumar Bhuwalka, Ki-Hyun Hwang, Yihwan Kim, E. S. Jung, Jae-Young Park
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
A novel tensile Si (tSi) and compressive SiGe (cSiGe) dual-channel FinFET CMOS co-integration scheme, aimed at logic applications for the 5nm technology node and beyond, is demonstrated for the first time, showing electrical performance benefits and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d564c76bd5f4f0442e06af3b149592
https://doi.org/10.1109/iedm.2016.7838496
https://doi.org/10.1109/iedm.2016.7838496
Autor:
Suman Datta, Guy P. Lavallee, Yeon-Cheol Heo, Arun V. Thathachary, Krishna Kumar Bhuwalka, Shigenobu Maeda, Mirco Cantoro
Publikováno v:
IEEE Electron Device Letters. 36:117-119
We experimentally demonstrate In x Ga1- x As FinFET devices with varying indium composition and quantum confinement effect. While increasing indium content enhances drive current by increasing the injection velocity, increasing quantum confinement en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab3953c6b6175f998b915f1dc86285df
https://doi.org/10.1109/led.2014.2384280
https://doi.org/10.1109/led.2014.2384280
Publikováno v:
Proceedings of 1st International Symposium on Plasma Process-Induced Damage.
The effective overetch time, the elapsed time after pattern seperation, determines the level of damage, because the plasma damage induced during metal etch process depends on the overetch time and only weakest pattem is damaged during process if patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::979caba66af6dc9b12b8c6319f187a8d
https://doi.org/10.1109/ppid.1996.715211
https://doi.org/10.1109/ppid.1996.715211
Autor:
Jeong-Kug Lee, Hyung-Suk Kim, Jongwook Lee, Ji-Woon Yang, Myung-Jun Chung, Won-Chul Lee, Min-Rok Oh, Jeong-Yun Yang, Kyoung-Wook Park, Won-Chang Lee, Kwang-Ho Ahn, Jae-Beom Park, Hyung-Ki Kim, Dai-Hoon Lee, Kyung-Suk Choi, Yo-Hwan Koh, Kwang-Myung Rho, In-Seok Hwang, Yeon-Cheol Heo, Chan-Kwang Park, Min Huh, Byung-Cheol Lee
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
1 Gbit SOI DRAM with a body-contacted (BC) SOI MOSFET structure is successfully realized for the first time. The fabricated 1G SOI DRAM has fully compatible process with 0.17 /spl mu/m bulk CMOS technology except for the isolation process. The key ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e7af2b3e46473d4a8e6f56bdb6e3bba
https://doi.org/10.1109/iedm.1997.650451
https://doi.org/10.1109/iedm.1997.650451
Autor:
Jong Duk Lee, Yeon-Cheol Heo, Yo-Hwan Koh, Sang-Tae Chung, Byung-Gook Park, Chan Kwang Park, Jeong-Ho Lee
Publikováno v:
Japanese Journal of Applied Physics. 38:5783
The dependence of contact resistance (R C), especially metal contact on p+-Si, has been investigated with several processes such as the etching of contact hole and the doping of junction region. In order to obtain highly reliable contact characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ade5e602f033f76713c450a6bc91a5b
https://doi.org/10.1143/jjap.38.5783
https://doi.org/10.1143/jjap.38.5783
Publikováno v:
Proceedings of 1st International Symposium on Plasma Process-Induced Damage; 1996, p94-97, 4p
Autor:
Yo-Hwan Koh, Min-Rok Oh, Jong-Wook Lee, Ji-Woon Yang, Won-Chang Lee, Chan-Kwang Park, Jae-Beom Park, Yeon-Cheol Heo, Kwang-Myung Rho, Byung-Cheol Lee, Myung-Jun Chung, Min Huh, Hyung-Suk Kim, Kyung-Suk Choi, Won-Chul Lee, Jeong-Kug Lee, Kwang-Ho Ahn, Kyoung-Wook Park, Jeong-Yun Yang, Hyung-Ki Kim
Publikováno v:
International Electron Devices Meeting IEDM Technical Digest; 1997, p579-582, 4p
Publikováno v:
Japanese Journal of Applied Physics; October 1999, Vol. 38 Issue: 10 p5783-5783, 1p