Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Yeon Ho Im"'
Publikováno v:
Plasma Chemistry and Plasma Processing. 43:47-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b21df73064d1ecb187d26d79d4cc6c33
https://doi.org/10.1007/s11090-022-10288-6
https://doi.org/10.1007/s11090-022-10288-6
Autor:
Tanwar, Arvin Sain, Khatun, Nasima, Chanu, Moirangthem Anita, Sarmah, Tapashi, Yeon-Ho Im, Iyer, Parameswar Krishnan
Publikováno v:
Analyst; 12/7/2023, Vol. 148 Issue 23, p6011-6019, 9p
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::318a7f5f398e5e54ae48c6a90492875c
https://doi.org/10.2139/ssrn.4233067
https://doi.org/10.2139/ssrn.4233067
Autor:
Arvin Sain Tanwar, Muhammad Mehtab, Jin-Tae Kim, Kwang-Joong Oh, Parameswar Krishnan Iyer, Yeon-Ho Im
Publikováno v:
Chemical Engineering Journal. 456:141002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4adc482f7e228d59837d9b820162b0b3
https://doi.org/10.1016/j.cej.2022.141002
https://doi.org/10.1016/j.cej.2022.141002
Autor:
Tahmineh Mahmoudi, Mohammadhosein Kohan, Won‐Yeop Rho, Yousheng Wang, Yeon Ho Im, Yoon‐Bong Hahn
Publikováno v:
Advanced Energy Materials. 12:2270182
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb44e98518fcb9f403165bf43a85a0f8
https://doi.org/10.1002/aenm.202270182
https://doi.org/10.1002/aenm.202270182
Autor:
Hyoungcheol Kwon, Imhee Won, Songhee Han, Dong-Hun Yu, Deuk-Chul Kwon, Yeon Ho Im, Felipe Iza, Dongyean Oh, Sung-Kye Park, Seonyong Cha
Publikováno v:
Physics of Plasmas. 29:093510
Vertical scaling technique faces a physical limitation in 3D NAND device fabrication, even assuming superior etching technology. Another promising scaling technique to increase the storage density is lateral scaling, which increases the number of hol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7849eb1c498b80d77abdf9759a9bdead
https://doi.org/10.1063/5.0101106
https://doi.org/10.1063/5.0101106
Autor:
Yunsung Cho, Jeong-Su Kim, Nomin Lim, Young Hwan Kim, Kwang-Ho Kwon, Il Ki Han, Yeon-Ho Im, Hyun Woo Lee
Publikováno v:
Vacuum. 166:45-49
We present a study that shows the independent influence of abnormal ion trajectories in the etched hole profile on thick dielectrics used in micro-electro mechanical system (MEMS) fabrication under fluorocarbon plasma. Under fixed neutral and ion flu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e48b0f22acba8327d3d2aa8a0c080a70
https://doi.org/10.1016/j.vacuum.2019.04.054
https://doi.org/10.1016/j.vacuum.2019.04.054
Publikováno v:
Journal of Physics D: Applied Physics. 55:415205
Although the ion temperature can considerably affect bulk plasma parameters and ion angle distribution functions arriving at the substrate, limited experiments have been conducted on this phenomenon because ion temperature measurement is difficult. F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df8dff1bc34e596bf831bb3ba7386881
https://doi.org/10.1088/1361-6463/ac8689
https://doi.org/10.1088/1361-6463/ac8689
Autor:
Yeong Geun Yook, Hae Sung You, Jae Hyeong Park, Won Seok Chang, Deuk Chul Kwon, Jung Sik Yoon, Kook Hyun Yoon, Sung Sik Shin, Dong Hun Yu, Yeon Ho Im
Publikováno v:
Journal of Physics D: Applied Physics. 55:255202
We present a topographic simulation platform that simultaneously considers 3D surface movement, neutral and ion transport, and surface reactions in plasma high-aspect-ratio (HAR) oxide etching. The hash map data structure is considered for an effecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::811f7ea597ec3f47832b3a162efeca4b
https://doi.org/10.1088/1361-6463/ac58cf
https://doi.org/10.1088/1361-6463/ac58cf
Autor:
Dae-Young Jeon, Seoung-Ki Lee, Ho Kyun Rho, Aram Lee, Mina Park, Sukang Bae, Dong Su Lee, Sang Hyun Lee, Yeon-Ho Im, Tae-Wook Kim
Publikováno v:
Carbon. 136:217-223
Since its discovery, the existence of graphene, a 2D extract of graphite, has been in the spotlight in the field of optoelectrical physics. Suspended graphene is potentially an ideal structure for utilizing intrinsic properties of the graphene by red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a56b33405ca243508b85cb63681583e
https://doi.org/10.1016/j.carbon.2018.04.080
https://doi.org/10.1016/j.carbon.2018.04.080