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Autor:
Min-Sun Keel, Young-Chan Kim, Daeyun Kim, Youngsun Oh, Seung Chul Shin, Myunghan Bae, Sungyoung Seo, Sung-Ho Choi, Sunju Hong, S.L. Cho, Yeomyung Km, Young-Gu Jin, Taeun Hwang, Jung-Chak Ahn, Kyoung-Min Koh, Ho Woo Park, Yong Hun Kwon, Seok-Ha Lee, Yi-tae Kim
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
A 2.8μm 4-tap global shutter pixel has been realized for a compact and high-resolution time of flight (ToF) CMOS image sensor. 20,000 e- of high full-well capacity (FWC) per a tap is obtained by employing a supplementary MOS capacitor. 36% of high q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83f5add5ab4b5497ee814ef0e56440d6
https://doi.org/10.1109/iedm13553.2020.9371950
https://doi.org/10.1109/iedm13553.2020.9371950
