Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Yeo-geon Yoon"'
Insights into structural defect formation in individual InP/ZnSe/ZnS quantum dots under UV oxidation
Autor:
Hayeon Baek, Sungsu Kang, Junyoung Heo, Soonmi Choi, Ran Kim, Kihyun Kim, Nari Ahn, Yeo-Geon Yoon, Taekjoon Lee, Jae Bok Chang, Kyung Sig Lee, Young-Gil Park, Jungwon Park
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract InP/ZnSe/ZnS quantum dots (QDs) stand as promising candidates for advancing QD-organic light-emitting diodes (QLED), but low emission efficiency due to their susceptibility to oxidation impedes applications. Structural defects play important
Externí odkaz:
https://doaj.org/article/35d1be9ac7684aebad5c80c773fec27e
Autor:
Myoungjin Park, Young Il Kim, Jin-goo Kang, Sehun Kim, Jaekook Ha, Yeo-geon Yoon, Changhee Lee
Publikováno v:
SID Symposium Digest of Technical Papers. 53:5-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79fcad3b88a92eaec38c129fb51aae68
https://doi.org/10.1002/sdtp.15401
https://doi.org/10.1002/sdtp.15401
Autor:
Myoungjin Park, Young Il Kim, Yun Ku Jung, Jin‐goo Kang, Sehun Kim, Jaekook Ha, Yeo‐geon Yoon, Changhee Lee
Publikováno v:
Journal of the Society for Information Display. 30:433-440
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bae611c34716560bfeaf25573c2d2b45
https://doi.org/10.1002/jsid.1126
https://doi.org/10.1002/jsid.1126
Publikováno v:
Proceedings of the International Display Workshops. :434
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6710bd1cf913dc56e1946c0d5179acc6
https://doi.org/10.36463/idw.2022.0434
https://doi.org/10.36463/idw.2022.0434
Publikováno v:
Proceedings of the International Display Workshops. :909
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdfe49bf80fbce99e26871170a7ecc9d
https://doi.org/10.36463/idw.2022.0909
https://doi.org/10.36463/idw.2022.0909
Publikováno v:
ECS Transactions. 1:25-28
In this study, we used scanning rapid thermal annealing (RTA) and a new structure of thin film transistor (TFT), which was inserted a light absorption layer into, in order to increase the growth rate of metal-induced lateral crystallization (MILC). A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7dd7f9cc21c870da7587dce123baa68
https://doi.org/10.1149/1.2209344
https://doi.org/10.1149/1.2209344
Publikováno v:
Journal of Crystal Growth. 290:379-383
The effect of dopants on the crystal growth and the microstructure of poly-crystalline silicon (poly-Si) thin film grown by metal induced lateral crystallization (MILC) method was intensively investigated. PH 3 and B 2 H 6 were used as source gases i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c29d0c3260b147eba1cded3d195afac
https://doi.org/10.1016/j.jcrysgro.2006.01.060
https://doi.org/10.1016/j.jcrysgro.2006.01.060
Publikováno v:
Thin Solid Films. 466:303-306
The effects of electrical stress on the leakage current of polycrystalline Si (poly-Si) thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC) were investigated. It was found that the leakage current of MILC TFTs coul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::582035abdc69e6bab715d50abc5e4571
https://doi.org/10.1016/j.tsf.2004.02.037
https://doi.org/10.1016/j.tsf.2004.02.037
Publikováno v:
IEEE Transactions on Electron Devices. 50:2344-2347
We have observed that B/sub 2/H/sub 6/-doped amorphous silicon (a-Si) showed a faster growth rate of metal-induced lateral crystallization (MILC) than that of undoped a-Si. From the analysis of the microstructure, it was thought that boron atoms coul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::098b9b2f7b3837d7014767d8c9849aa8
https://doi.org/10.1109/ted.2003.818154
https://doi.org/10.1109/ted.2003.818154
Publikováno v:
Journal of Power Sources. 115:346-351
Amorphous silicon is investigated as a negative electrode (anode) material for lithium-ion batteries. A thin (500 A) film of amorphous silicon is cycled versus a lithium electrode. A maximum discharge capacity of 4 Ah g−1 is observed by cycling ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4601c4c2eaba1cf0e72a1d0eec2e801b
https://doi.org/10.1016/s0378-7753(02)00707-3
https://doi.org/10.1016/s0378-7753(02)00707-3