Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Yeo Song Seol"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:417-422
A tungsten (W) etch process in a SF6 helicon plasma has been modeled using neural networks. The process was characterized by a 24−1 fractional factorial experimental design. The design factors that were varied include source power, bias power, chuc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faee0d497376e378f7d903c5ddb02175
https://doi.org/10.1116/1.582203
https://doi.org/10.1116/1.582203
Publikováno v:
Journal of The Electrochemical Society. 144:2442-2447
The formation mechanism of tungsten (W) atoms in tungsten etching has been investigated with the SF 6 /Ar helicon plasma. The etch rate of W films decreases with increasing flow rate of Ar in the SF 6 /Ar gas mixture while the density of tungsten ato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8fd7c5585f97a734a85991f1f269799
https://doi.org/10.1149/1.1837834
https://doi.org/10.1149/1.1837834
Publikováno v:
Materials Chemistry and Physics. 35:134-138
Etching of the bottom resist layer in a tri-level resist (TLR) process has been investigated in a magnetically enhanced reactive ion etcher (MERIE). It was found that the addition of Ar to an O 2 plasma is effective for obtaining an anisotropic etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e00830a2e630fbda16180b2d8ad4d2cd
https://doi.org/10.1016/0254-0584(93)90188-r
https://doi.org/10.1016/0254-0584(93)90188-r
Publikováno v:
1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395).
Using a pulsed-power inductively coupled plasma technique, etching characteristics for a SiO/sub 2/ film were investigated and applied to control the ferroelectric performance degradation induced by plasma etching when a ferroelectric capacitor struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc5f88670432cd138d8edc05804edce
https://doi.org/10.1109/ppid.1999.798835
https://doi.org/10.1109/ppid.1999.798835
Publikováno v:
MRS Proceedings. 655
Polarization degradation due to metal etch and/or photoresist(PR) strip processes has been investigated for Pt/SrBi2Ta2O9(SBT)/Pt ferroelectric capacitors. Interconnect metal line consisting of TiN/Al/Ti/TiN/Ti layers has been patterned by normal pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b9dfa1ce38cbcf5942ad6305d7c96d
https://doi.org/10.1557/proc-655-cc2.8.1
https://doi.org/10.1557/proc-655-cc2.8.1
Publikováno v:
1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat No99TH8395); 1999, p145-148, 4p
Autor:
Yeo Song Seol, Chanro Park, D. S. Pyun, Jun Hee Cho, Il Hyun Choi, Chang Ju Choi, Il Young Kwon
Publikováno v:
MRS Proceedings. 596
The effects of reactive ion etching damage on the electrical properties of Pt/SBT/Pt capacitors have been investigated. The plasma treated SBT/Pt layers showed a significant decrease in remanent polarization compared with that of the reference sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2da60c7c46b77adf79a91b00ba0456
https://doi.org/10.1557/proc-596-155
https://doi.org/10.1557/proc-596-155
Publikováno v:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV.
The bitline contact hole and the storage node contact hole of 0.22 micrometers in 1G DRAM device manufacturing of 0.18 micrometers design rule were formed with thin nitride barrier self- aligned contact (TNBSAC) technology. In this work the isotropic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb36c8df1ada85ab1a6389bf3df2840e
https://doi.org/10.1117/12.324340
https://doi.org/10.1117/12.324340
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::442e53da1f4036b852769f243f45c780
https://doi.org/10.1109/imnc.1998.730051
https://doi.org/10.1109/imnc.1998.730051
Publikováno v:
MRS Proceedings. 541
Lead-Zirconate-Titanate (PZT) films were etched with CF4/Ar mixed gases in high-density plasmas. Etch characteristics of the PZT film were investigated by using in-situ plasma diagnostic tools in conjunction with the surface analysis after etching. D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cae245bac8995281574e21d5900a590
https://doi.org/10.1557/proc-541-113
https://doi.org/10.1557/proc-541-113