Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yens Ho"'
Autor:
Shao-Siang Tung, Tzu-Hsuan Hsu, Yens Ho, Yung-Hsiang Chen, Yelehanka R. Pradeep, Rakesh Chand, Ming-Huang Li
Publikováno v:
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::091a8e334e4ccf23e3e5fe162c5128bc
https://doi.org/10.1109/mems49605.2023.10052454
https://doi.org/10.1109/mems49605.2023.10052454
Autor:
Tzu-Hsuan Hsu, Shao-Siang Tung, Yan-Ming Huang, Guan-Lin Wu, Chin-Yu Chang, Yens Ho, Yung-Hsiang Chen, Yelehanka Pradeep, Rakesh Chand, Ming-Huang Li
Publikováno v:
Journal of Micromechanics and Microengineering. 33:054001
This work investigates a co-design approach for fundamental symmetric Lamb wave (S0) resonators (LWR) and film bulk acoustic wave resonators (FBAR) in a commercial 8-inch aluminum nitride (AlN) microelectromechanical system (MEMS) platform to enable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b25ee88ec67ea7632098ed93d613c3a7
https://doi.org/10.1088/1361-6439/acbfc1
https://doi.org/10.1088/1361-6439/acbfc1
Autor:
Chin-Yu Chang, Yan-Ming Huang, Tzu-Hsuan Hsu, Yung-Hsiang Chen, Rakesh Chand, Yelehanka Ramachandramurthy Pradeep, Yens Ho, Ming-Huang Li, Weileun Fang, Sheng-Shian Li
Publikováno v:
2022 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c2ae4f41e3f4c81e96be90eeac79de6
https://doi.org/10.1109/eftf/ifcs54560.2022.9850761
https://doi.org/10.1109/eftf/ifcs54560.2022.9850761
Publikováno v:
IEEE Electron Device Letters. 26:613-615
This letter studies resistance variations of the Co salicide interconnect accompanied by various surrounding in a sub-0.13-/spl mu/m CMOS technology. Our analysis shows that, during the salicidation processes, the diffusion of Co atoms and thus salic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29e98bbd7efc4080795152ac7ace5f03
https://doi.org/10.1109/led.2005.853647
https://doi.org/10.1109/led.2005.853647
Publikováno v:
Solid-State Electronics. 46:1941-1943
This letter discusses the abnormal capacitance–voltage ( C – V ) curves found in MOS transistors with ultra-thin gate oxide less than 2.0 nm. For MOSFETs without source and drain connected to ground, the measured C – V curves in strong inversio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865916bb10298a87b80e7bc92de1d9e7
https://doi.org/10.1016/s0038-1101(02)00124-7
https://doi.org/10.1016/s0038-1101(02)00124-7
Publikováno v:
IEEE Electron Device Letters; Sep2005, Vol. 26 Issue 9, p613-615, 3p, 4 Diagrams, 1 Graph