Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Yeng-Kaung Peng"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 13:286-292
In this paper, an analytical model for chemical mechanical polishing (CMP) is described. This model relates the physical parameters of the CMP process to the in-die variation of interlayer dielectric (ILD) in multilevel metal processes. The physical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c3f51300ef183f39a7df42c6efe393d
https://doi.org/10.1109/66.857937
https://doi.org/10.1109/66.857937
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 12:313-322
Variation in channel length degrades circuit reliability and yield. A common way to compensate for this problem is to increase the mean channel length, which, unfortunately, degrades circuit performance for digital circuits. One source of channel len
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::227f4deff83114df027b3fa739b406d4
https://doi.org/10.1109/66.778196
https://doi.org/10.1109/66.778196
Publikováno v:
1997 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop ASMC 97 Proceedings.
This project integrates flexible data collection module, relational database, manufacturing execution system (MES) interface, and a simulation system that employs statistical approach and advanced numerical processing methodology. Concept of process-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f18e701a731ad746c033d74d77984404
https://doi.org/10.1109/asmc.1997.630701
https://doi.org/10.1109/asmc.1997.630701
Publikováno v:
1997 2nd International Workshop on Statistical Metrology.
The ever-growing demand to increase speed by shrinking device geometries has driven manufacturers to take more drastic measures in defect reduction. The installation of the state-of-the-art air filtration systems has shifted the focus from human-caus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8167df8fd1eae63b19786f030379747b
https://doi.org/10.1109/iwstm.1997.629411
https://doi.org/10.1109/iwstm.1997.629411
Publikováno v:
Scopus-Elsevier
In-situ Particle Monitors (ISPM) have been adopted in the industry for optimizing cleaning cycles and detecting equipment abnormalities. However, in advanced manufacturing environments where the equipment is well maintained and where yield-dominating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8135cf37114243a645e279148985f63
https://doi.org/10.1109/issm.1997.664502
https://doi.org/10.1109/issm.1997.664502
Autor:
Ly Nguyen, Chenming Hu, Gene Hill, Michael H. Brodsky, Linda Milor, Michael Orshansky, Yeng-Kaung Peng
Publikováno v:
SPIE Proceedings.
Statistical characterization of gate CD variability of a production CMOS process reveals a large spatial intra-field component, strongly dependent on the local layout patterns. We present a novel measurement based characterization approach that is ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::733e61ecf7b5bd2f962cddfc705514ca
https://doi.org/10.1117/12.389050
https://doi.org/10.1117/12.389050
Publikováno v:
SPIE Proceedings.
Deep submicron technology poses many difficult challenges. One of them is the optimization of the clock rate versus sub-threshold leakage trade-off. Top speed performance demands the shortest possible channel length for all transistors in the critica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77b9addaaaa701a1a9335dfcc1165b71
https://doi.org/10.1117/12.324395
https://doi.org/10.1117/12.324395
Publikováno v:
Computer Integrated Manufacturing Systems. 10:169
A method of analyzing a failure of a sample, such as a wafer or a package unit made from a die sliced from the wafer, uses a computer aided design (CAD) tool in conjunction with a dual beam scanner and reverse engineering to improve the yield of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d513396b237ce7bbc71159d30d1782a
https://doi.org/10.1016/s0951-5240(97)84311-x
https://doi.org/10.1016/s0951-5240(97)84311-x
Publikováno v:
1997 IEEE/SEMI Advanced Semiconductor Manufacturing Conference & Workshop ASMC 97 Proceedings; 1997, p33-36, 4p
Publikováno v:
1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No97CH36023); 1997, pB29-B32, 4p