Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yen-lin Tsai"'
Publikováno v:
Life, Vol 13, Iss 9, p 1942 (2023)
Objective: The aim of this study was to determine whether modern congruent tibial inserts are associated with superior outcomes in total knee arthroplasty (TKA). Background: Ultracongruent fixed-bearing (UCFB) and medial congruent fixed-bearing (MCFB
Externí odkaz:
https://doaj.org/article/9406dccc782845438059b488b2ced84e
Autor:
Yen-lin Tsai, 蔡嚴麟
92
This paper examines the relation among foreign direct investment, corporate governance, and firm performance. This study not only examines the influence of corporate governance on the profitability of companies which involve foreign direct in
This paper examines the relation among foreign direct investment, corporate governance, and firm performance. This study not only examines the influence of corporate governance on the profitability of companies which involve foreign direct in
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/18959098460395206061
Publikováno v:
IEEE Transactions on Electron Devices. 67:140-145
In this article, thin-film transistors (TFTs) with a polycrystalline indium–gallium–oxide (poly IGO) active layer were fabricated for ultraviolet (UV) detection. To achieve better sensing performance, an in situ nitrogen doping (N-doping) techniq
Autor:
Yu Zung Chiou, Shoou-Jinn Chang, Lucent Lu, Tien Hung Cheng, Yen Chi Cheng, Yen Lin Tsai, Sheng Po Chang
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q3034-Q3040
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
No standard treatment for Bacille Calmette–Guérin (BCG)-associated osteomyelitis, a rare but serious complication of the BCG vaccine, has been established. This study explored the short- and long-term outcomes of surgical intervention for BCG-asso
Autor:
Jone F. Chen, Kuei Fen Chang, Shang Feng Shen, Chia Yu Kao, Yen Lin Tsai, Hao Tang Hsu, Hann Ping Hwang
Publikováno v:
Semiconductor Science and Technology. 33:125019
The effect of doping concentration in the n− drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n− drift doping concentration improves
Publikováno v:
Japanese Journal of Applied Physics. 57:04FD01
Device characteristics and hot-carrier-induced device degradation of n-channel MOS transistors with an off-state breakdown voltage of approximately 25 V and various Si recess depths introduced by sidewall spacer overetching are investigated. Experime
Autor:
Yen-Lin Tsai, Jone F Chen, Shang-Feng Shen, Hao-Tang Hsu, Chia-Yu Kao, Kuei-Fen Chang, Hann-Ping Hwang
Publikováno v:
Semiconductor Science & Technology; Dec2018, Vol. 33 Issue 12, p1-1, 1p
Publikováno v:
Japanese Journal of Applied Physics; Apr2018, Vol. 57 Issue 4S, p1-1, 1p