Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Yen-chun Fu"'
Autor:
Matthew D. Smith, Jerome A. Cuenca, Daniel E. Field, Yen-chun Fu, Chao Yuan, Fabien Massabuau, Soumen Mandal, James W. Pomeroy, Rachel A. Oliver, Michael J. Uren, Khaled Elgaid, Oliver A. Williams, Iain Thayne, Martin Kuball
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035306-035306-5 (2020)
GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using m
Externí odkaz:
https://doaj.org/article/8fedbae859214ba68c92f35c0dcab39c
Autor:
Yen-Chun Fu, 傅彥鈞
100
With the growth of global energy demand and human impacts on the environment, there is an ever increasing need for each country to come up with a realistic plan for a green energy sources. One of the potential energy sources is fuel cell. Un
With the growth of global energy demand and human impacts on the environment, there is an ever increasing need for each country to come up with a realistic plan for a green energy sources. One of the potential energy sources is fuel cell. Un
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/24246177134115670771
Autor:
Yen-Chun Fu, 傅彥鈞
99
This paper examines the impact of bankers on the board to cost of capital and information transparency. Past studies find that bankers on the board are positively relatived to corporate governance, and thus, reduce the cost of capital of the
This paper examines the impact of bankers on the board to cost of capital and information transparency. Past studies find that bankers on the board are positively relatived to corporate governance, and thus, reduce the cost of capital of the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/24752068837257987533
Autor:
Yen-Chun Fu, 傅彥鈞
96
In the thesis, we investigate the change of the physical and electrical properties based on Stained-Si. The thesis classifies two major sections:The first section is that we consider the variation of vibration phonon frequency between atoms
In the thesis, we investigate the change of the physical and electrical properties based on Stained-Si. The thesis classifies two major sections:The first section is that we consider the variation of vibration phonon frequency between atoms
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99404811350555640063
Autor:
Yen-Chun Fu, 傅彥鈞
93
The vapor-compression liquid chiller is the main energy consuming equipment in the air-conditioner system, so studying on energy saving has been an important issue. The coefficient of performance (COP) used to express the whole energy efficie
The vapor-compression liquid chiller is the main energy consuming equipment in the air-conditioner system, so studying on energy saving has been an important issue. The coefficient of performance (COP) used to express the whole energy efficie
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/232xu5
Publikováno v:
Acta Horticulturae. :51-58
Autor:
Yen-Chun Fu, 傅彥鈞
97
The digitized integration result of cadastral map has bee scanned and filed, but current cadastral map still has potential errors due to the instrument technology, human errors, damage of cadastral map, and different cadastral coordinates in
The digitized integration result of cadastral map has bee scanned and filed, but current cadastral map still has potential errors due to the instrument technology, human errors, damage of cadastral map, and different cadastral coordinates in
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/12503611874225527335
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P457-P463
Autor:
Iain G. Thayne, Matthew J. Steer, Xu Li, David Millar, Paul K. Hurley, Yen-Chun Fu, Uthayasankaran Peralagu
The results of an investigation into the impact of in situ H2 plasma exposure on the electrical properties of the p/n-In0.3 Ga0.7 Sb-Al2O3 interface are presented. Samples were processed using a clustered inductively coupled plasma reactive ion etchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4d60383f3c92d0448717cb48482b9ca
https://hdl.handle.net/10468/9443
https://hdl.handle.net/10468/9443
Autor:
Uthayasankaran Peralagu, Ian M. Povey, Yen-Chun Fu, Paul K. Hurley, David Millar, Iain G. Thayne, Olesya Ignatova, Khalid Hossain, Xu Li, Matthew J. Steer, Terry G Golding, Manish Jain, Ravi Droopad
Publikováno v:
ECS Transactions. 69:15-36
In an era of power-constrained transistor scaling, III-V semiconductors, with high electron velocities, appear promising as the n-channel solution in post-Si CMOS technologies [1]. To make this a reality, substantial undertaking has gone into finding