Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yen-Ya Hsu"'
Autor:
Yen-Ya Hsu, 許雁雅
94
We have studied experimentally and theoretically two kinds of nonvolatile metal nanocrystal memories: nickel nanocrystal memories and nickel-silicide nanocrystal memories. The metal nanocrystals memories come into notice as so many advantages
We have studied experimentally and theoretically two kinds of nonvolatile metal nanocrystal memories: nickel nanocrystal memories and nickel-silicide nanocrystal memories. The metal nanocrystals memories come into notice as so many advantages
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/42847110010404157777
Autor:
Lijie Zhang, Shyh-Shyuan Sheu, Wen-Hsing Liu, Heng-Yuan Lee, Yu-Sheng Chen, Ru Huang, Ming-Jinn Tsai, Wei-Su Chen, SuMin Wang, Chen-Han Tsai, Pang-Shiu Chen, Frederick T. Chen, Yen-Ya Hsu, Pei-Yi Gu
Publikováno v:
Science China Information Sciences. 54:1073-1086
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e973fd92cf9dae7c541235fe9dc1acb4
https://doi.org/10.1007/s11432-011-4217-8
https://doi.org/10.1007/s11432-011-4217-8
Autor:
Pei-Chia Chiang, Wei-Chou Hsu, Ming-Jinn Tsai, Ming-Jer Kao, Meng-Hsueh Chiang, Shyh-Shyuan Sheu, C. Yu, Wen-Hsing Liu, K.-Li Su, Jun-Tin Lin, Yi-Bo Liao, Yen-Ya Hsu
Publikováno v:
IET Computers & Digital Techniques. 4:285-292
In this study, the authors propose non-conventional phase-change memory programming schemes using a comprehensive model, which integrates the underlying electrical and thermal theories. Various pulsing schemes aiming to reduce operation power without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caa006395c0bd6d9cefea9a9e2c65ac0
https://doi.org/10.1049/iet-cdt.2009.0037
https://doi.org/10.1049/iet-cdt.2009.0037
Autor:
Wen-Hsing Liu, Ming-Jinn Tsai, Ming-Wei Lai, Wei-Su Chen, Peggy Gu, Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, Chi-Wei Chen, Yen-Ya Hsu, Frederick T. Chen, Shen-Chuan Lo
Publikováno v:
Current Applied Physics. 10:e75-e78
The size dependence of the resistance states of a TiN/HfO 2 /Ti resistance random access memory (ReRAM) metal–insulator–metal (MIM) structure is described in terms of the filament distribution within the structure. We introduce radial distributio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79878b3181b5a95243bb929e1be2ca0a
https://doi.org/10.1016/j.cap.2009.12.018
https://doi.org/10.1016/j.cap.2009.12.018
Autor:
Chenhsin Lien, Yu-Sheng Chen, Ming-Jinn Tsai, Wen-Hsing Liu, Frederick T. Chen, Wei-Su Chen, Heng-Yuan Lee, Chen-Han Tsai, Pang-Shiu Chen, Sum-Min Wang, Yen-Ya Hsu, Pei-Yi Gu
Publikováno v:
IEEE Electron Device Letters. 32:1585-1587
The effect of operation current on the high-resistance state and the endurance for the HfOx-based resistive device is comprehensively studied. Due to the current overshoot by the parasitic capacitances, an excess current leakage for the high resistan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56c50cdefb8f4970187d709c1e4eebf4
https://doi.org/10.1109/led.2011.2166051
https://doi.org/10.1109/led.2011.2166051
Autor:
Frederick T. Chen, Ming-Jinn Tsai, Chenhsin Lien, Pei-Yi Gu, Wei-Su Chen, Yen-Ya Hsu, Chen-Han Tsai, Pang-Shiu Chen, Yu-Sheng Chen, Wen-Hsing Liu, Heng-Yuan Lee
Publikováno v:
IEEE Electron Device Letters. 32:390-392
A scaling feasibility for the process integration of the Ti/HfOx, resistance memory with pillar structure is studied in this letter. An empirical model is successfully developed to correlate the forming voltage of devices to their cell sizes. The abn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c3e84525c3c39175dfe4d9539921558
https://doi.org/10.1109/led.2010.2099201
https://doi.org/10.1109/led.2010.2099201
Autor:
Sum-Min Wang, Wei-Su Chen, Chen-Han Tsai, Pang-Shiu Chen, Y. H. Wang, Shan-Yi Yang, Yi-Chan Chen, Frederick T. Chen, Yen-Ya Hsu, Pei-Yi Gu, H. Y. Lee, M.-J. Tsai, Wen-Hsing Liu
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
HfOx RRAM is a most promising candidate for next generation nonvolatile memory [1,2] with highest endurance, speed till now but bipolar switching affects the selection of steering device, performance and applications. Bipolar and unipolar RRAMs have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6788df9d98d1ac514b05f440d5e921f0
https://doi.org/10.1109/vtsa.2011.5872249
https://doi.org/10.1109/vtsa.2011.5872249
Autor:
Yu-Sheng Chen, Wen-Hsing Liu, Chenhsin Lien, Sum-Min Wang, Pei-Yi Gu, Heng-Yuan Lee, Wei-Su Chen, Chen-Han Tsai, Pang-Shiu Chen, Ming-Jinn Tsai, Frederick T. Chen, Yen-Ya Hsu
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
Recently, binary oxide based resistive memory exhibits a large sensing margin, low power, and high speed as a promising candidate for the next generation nonvolatile memory [1,2]. The compliance current (I C ) is required for the device under forming
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89cdcce3da731b3933ee61316ea8981d
https://doi.org/10.1109/vtsa.2011.5872252
https://doi.org/10.1109/vtsa.2011.5872252
Autor:
Wen-Hsing Liu, Yen-Ya Hsu, Yu-Sheng Chen, Pei-Yi Gu, Lijie Zhang, Frederick T. Chen, Ru Huang, Heng-Yuan Lee, Shun-Min Wang, Ming-Jinn Tsai, Wei-Su Chen, Chen-Han Tsai, Pang-Shiu Chen
Publikováno v:
2011 International Reliability Physics Symposium.
In this paper, statistical measurements on the retention behavior of the stable HfOB x -based RRAM under various thermal/voltage/cycling stresses are investigated. Testing results show that, data retention of high resistance state (HRS) of a RRAM is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be01c697baa573932ec0069aad7bdf9c
https://doi.org/10.1109/irps.2011.5784591
https://doi.org/10.1109/irps.2011.5784591
Autor:
Wen-Hsing Liu, Shyh-Shyuan Sheu, Wei-Chou Hsu, Yi-Bo Liao, Meng-Hsueh Chiang, Ming-Jinn Tsai, Yi-Hsuan Chiu, Keng-Li Su, Chia-Long Lin, Yen-Ya Hsu, Ming-Jer Kao, Pei-Chia Chiang
Publikováno v:
2010 IEEE International Conference on Integrated Circuit Design and Technology.
Design issues and insights of multilevel phase change memory are presented. Based on a proposed compact model calibrated to measured data, we assess the impact of resistance drift on multilevel cell design. It is found that special care has to be tak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d981b3eccc897ebbdafad3d62dd54b18
https://doi.org/10.1109/icicdt.2010.5510298
https://doi.org/10.1109/icicdt.2010.5510298