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pro vyhledávání: '"Yen-Xin Chen"'
Autor:
Yen-Xin Chen, 陳諺信
94
In this thesis, in-situ post-deposition N2O plasma treatment improved the electrical characteristics of silicon oxide, such as leakage current density and dielectric strength. The silicon oxide were prepared by plasma enhanced chemical vapor
In this thesis, in-situ post-deposition N2O plasma treatment improved the electrical characteristics of silicon oxide, such as leakage current density and dielectric strength. The silicon oxide were prepared by plasma enhanced chemical vapor
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/21794952773549392023
Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide
Publikováno v:
Japanese Journal of Applied Physics. 46:2887-2891
A new plasma treatment method was proposed to improve silicon oxide films. The improvement of the films was attributed to the introduction of oxygen atoms, which were extracted from self-biased nitrous oxide plasma. The introduced oxygen atoms decrea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b66c842b513f9f42a912869c3cd8aa50
https://doi.org/10.1143/jjap.46.2887
https://doi.org/10.1143/jjap.46.2887
