Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yen-Ting Hsieh"'
Autor:
Yen-Ting Hsieh, 謝燕婷
96
Metal-binding sites involve in the biological function of the metalloproteins. Zinc-binding proteins are the most abundant metalloprotein in the protein database and their binding sites were showed predictable from both structure and sequence
Metal-binding sites involve in the biological function of the metalloproteins. Zinc-binding proteins are the most abundant metalloprotein in the protein database and their binding sites were showed predictable from both structure and sequence
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/57288081359277715621
Study on Formation of Ge Nanocrystal using SiGeO and SiGeN layer for Nonvolatile Memory Applications
Autor:
Yen-Ting Hsieh, 謝彥廷
95
In recent years, the portable electronic products have widely applied, such as digit camera, laptop, cell phone and so on. These portable electronic products play an important role in the market, and these products are all based on the nonvol
In recent years, the portable electronic products have widely applied, such as digit camera, laptop, cell phone and so on. These portable electronic products play an important role in the market, and these products are all based on the nonvol
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/93859052988637619532
Publikováno v:
IEEE Transactions on Nanotechnology. 8:185-189
In this study, the authors proposed a formation mechanism of Ge nanocrystals (NCs) embedded in the dielectric by using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 films for nonvolatile memory (NVM) application. Because of internal competition reaction, this fo
Autor:
Ting-Chang Chang, Wei Ren Chen, Ren You Wang, Chun-Hao Tu, Po-Tsun Liu, Chun-Yen Chang, Yen Ting Hsieh, Jui Lung Yeh
Publikováno v:
Surface and Coatings Technology. 202:1333-1337
A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly obser
Publikováno v:
Applied Physics Letters. 91:102106
using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 films for nonvolatile memory application in this study. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high pressure H2 treatment or steam
Autor:
Chun-Yen Chang, Edward Yi Chang, Guang-Li Luo, M. H. Pilkuhn, H. W. Chung, Yen-Ting Hsieh, J. Y. Yang, Shih-Hsuan Tang
Publikováno v:
Applied Physics Letters. 90:083507
Si+ pre-ion-implantation combined with a GexSi1−x metamorphic buffer structure for the growth of Ge layer on Si substrate is proposed. Enhanced strain relaxation of the GexSi1−x metamorphic buffer layer on Si substrate was achieved due to the int
Autor:
Y. Lin, M. Ueki, Chun-Yen Chang, Hiroshi Yamaguchi, Yen-Ting Hsieh, Yoshiro Hirayama, Edward Yi Chang
Publikováno v:
Applied Physics Letters. 90:023509
The growth of the AlGaSb∕InAs high-electron-mobility transistor (HEMT) epitaxial structure on the Si substrate is investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge∕GeSi and molecular beam epitaxy-grown AlGaSb∕AlSb
Autor:
Jia-Shing Chen, Shang-Chi Lin, Chia-Ying Chen, Yen-Ting Hsieh, Ping-Hui Pai, Long-Kung Chen, Shengwan Lee
Publikováno v:
BMC Research Notes; 2014, Vol. 7 Issue 1, p1-18, 18p, 4 Charts, 4 Graphs
Publikováno v:
IEEE Transactions on Nanotechnology; Mar2009, Vol. 8 Issue 2, p185-189, 5p
Autor:
Shengwan Lee, Yen-Ting Hsieh, Shang-Chi Lin, Jia-Shing Chen, Chia-Ying Chen, Long-Kung Chen, Ping-Hui Pai
Publikováno v:
BMC Research Notes
Background Rice is one of the major crop species in the world helping to sustain approximately half of the global population’s diet especially in Asia. However, due to the impact of extreme climate change and global warming, rice crop production an