Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yen-Ting Fan"'
Publikováno v:
AIP Advances, Vol 8, Iss 9, Pp 095029-095029-6 (2018)
Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs
Externí odkaz:
https://doaj.org/article/a2ab8f2ad5304c3ab3b82a748a4392cd
Autor:
Yen-Ting Fan, Ming-Cheng Lo, Chu-Chun Wu, Peng-Yu Chen, Jenq-Shinn Wu, Chi-Te Liang, Sheng-Di Lin
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075213-075213-6 (2017)
Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the
Externí odkaz:
https://doaj.org/article/11011cc28960404f86e82c1388aef4a6
Publikováno v:
Assembly Automation, 2013, Vol. 33, Issue 4, pp. 317-333.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/AA-10-2012-077
Autor:
Ching Chen Yeh, Guan Ming Su, Ankit Kumar, Chi-Te Liang, Dinesh K. Patel, Sheng-Di Lin, Chau Shing Chang, Yen Ting Fan, Lee Chow, Bi-Yi Wu
Publikováno v:
Nanotechnology. 31(20)
We have performed extensive transport experiments on a 4 nm thick aluminum (Al) superconducting film grown on a GaAs substrate by molecular beam epitaxy (MBE). Nonlinear current-voltage (I-V) measurements on such a MBE-grown superconducting nanofilm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f77eb0df76a22b791b962ceaeaebcd61
https://pubmed.ncbi.nlm.nih.gov/32000142
https://pubmed.ncbi.nlm.nih.gov/32000142
Autor:
Chi-Te Liang, Ching Chen Yeh, Sheng-Di Lin, Yen Ting Fan, Ankit Kumar, Guan Ming Su, Dinesh K. Patel, Chau Shing Chang, Lee Chow, Bi-Yi Wu
Publikováno v:
Journal of Nanomaterials, Vol 2019 (2019)
We have performed detailed transport measurements on a 3 nm thick (as-grown) Al film on GaAs prepared by molecular beam epitaxy (MBE). Such an epitaxial film grown on a GaAs substrate shows the Berezinskii-Kosterlitz-Thouless (BKT) transition, a topo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f32f1b4f8224701300a019a81366b1f3
https://doaj.org/article/710490a9279b4d469d6549d76f34fda0
https://doaj.org/article/710490a9279b4d469d6549d76f34fda0
Publikováno v:
Conference on Lasers and Electro-Optics.
We have grown GaAs layers on an aluminum nanofilm by using molecular beam epitaxy. Defect-free GaAs and InAs quantum dots are investigated with X-ray diffraction, transmission electron microscopy, and room-temperature photoluminescence.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f1977b27527b5ac5f1bb0f710db85fb
https://doi.org/10.1364/cleo_si.2017.sth3i.8
https://doi.org/10.1364/cleo_si.2017.sth3i.8
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
We present the method for large-area growth of single-crystalline Al films in atomic scale on GaAs substrate by using molecular beam epitaxy. The grown Al film of thickness down to 5 nm exhibits smooth surface morphology, a clear and single X-ray dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a30aa6dead5361405bf68a8127b5bb0
https://doi.org/10.1109/nano.2016.7751485
https://doi.org/10.1109/nano.2016.7751485
Publikováno v:
IEICE Electronics Express. 3:499-503
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb024f81fc3e77f4d2814c83d5a0e376
https://doi.org/10.1587/elex.3.499
https://doi.org/10.1587/elex.3.499
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075213-075213-6 (2017)
Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::270dae6de7cfb675b48341cc58042bba
https://doaj.org/article/11011cc28960404f86e82c1388aef4a6
https://doaj.org/article/11011cc28960404f86e82c1388aef4a6