Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Yen-Ting Chiang"'
Autor:
Chia-Chen Lin, Keng-Hao Liu, Li-Ang Lee, Li-Pang Chuang, Yu-Sheng Lin, Li-Jen Hsin, Wan-Ni Lin, Yen-Ting Chiang, Wen-Nuan Cheng, Hsueh-Yu Li
Publikováno v:
Journal of Clinical Medicine; Volume 11; Issue 23; Pages: 7078
Although continuous positive airway pressure is the gold standard for obstructive sleep apnea (OSA), it does not improve obesity. By contrast, bariatric surgery significantly improves obesity but with sustained OSA in the majority of patients. This s
Autor:
Li-Jen Hsin, Yi-Chan Lee, Wan-Ni Lin, Yi-An Lu, Li-Ang Lee, Ming-Shao Tsai, Wen-Nuan Cheng, Yen-Ting Chiang, Hsueh-Yu Li
Publikováno v:
Journal of Clinical Medicine; Volume 11; Issue 17; Pages: 4960
Objectives: To evaluate the safety and efficacy of a novel technique for transoral tongue suspension (TOTS) in obstructive sleep apnea (OSA) patients. Material and Methods: The retrospective study enrolled 24 consecutive OSA patients (21 males; avera
Publikováno v:
Journal of Clinical Medicine; Volume 11; Issue 14; Pages: 4186
Background: Obstruction of the tongue is commonly seen in patients with obstructive sleep apnea (OSA). This study proposed whole tongue treatment using coblation ablation tongue (CAT) and aimed to explore the potential association between the dimensi
Autor:
Yen-Ting Chiang, 江衍霆
107
A 28/38 GHz dual-band frequency synthesizer for 5th generation mobile communication is implemented using TSMC 90-nm CMOS technology. The on-chip VCO achieves the tuning range from 23.5 GHz to 28 GHz, and exhibits the phase noise of -105.57 d
A 28/38 GHz dual-band frequency synthesizer for 5th generation mobile communication is implemented using TSMC 90-nm CMOS technology. The on-chip VCO achieves the tuning range from 23.5 GHz to 28 GHz, and exhibits the phase noise of -105.57 d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/xn7pyx
Publikováno v:
IEEE Sensors Journal. 11:3446-3450
Pseudo 6H poly-SiC (P6H-SiC) films are deposited on the pressureless-sintering ceramic SiC substrate by rapid thermal chemical vapor deposition technology to develop metal-semiconductor-metal (MSM) photodetectors (PD) for low-cost and high-performanc
Publikováno v:
Sensors and Actuators B: Chemical. 156:338-342
The Au/SnO 2 /n-LTPS MOS Schottky diode prepared on a glass substrate for carbon monoxide (CO) sensing applications is studied. The n-LTPS (n-type low temperature polysilicon) is prepared by excimer laser annealing and PH 3 plasma treatment of an amo
Autor:
Tung-Hsing Lee, Ming-Shing Chen, Cheng-I Lin, Yen-Ting Chiang, Feng-Renn Juang, Judy Ning, Yean-Kuen Fang, Sam Chou
Publikováno v:
IEEE Transactions on Electron Devices. 58:901-905
From the measured data, the impact of the rapid thermal process (RTP) and laser spike anneal (LSA) sequence on negative bias temperature instability (NBTI) and current gain was investigated on 40-nm complementary metal-oxide semiconductor technology.
Publikováno v:
IEEE Sensors Journal. 11:150-154
In this paper, ultraviolet (UV) detecting performances of the n-i-p SiCN homojunction prepared on a p-type (100) silicon substrate under room and elevated temperatures were studied. We analyze the morphology and structure of the crystalline SiCN film
Publikováno v:
Materials Science in Semiconductor Processing. 13:189-192
A high Q on-chip inductor with some unique structures has been fabricated with 0.13 μm CMOS compatible process for the first time. The unique structures including parallel stacked, line via between inter-metal layers, and use the top signal pad as t
Autor:
Cheng-I Lin, Chii-Wen Chen, Chei-Chang Chen, Yen-Ting Chiang, Feng-Renn Juang, Tse-Heng Chou, Yean-Kuen Fang
Publikováno v:
IEEE Sensors Journal. 10:1337-1341
The p-strain Si/i- heterojunctions prepared by a rapid thermal chemical vapor deposition system on an n-Si substrate with back preferentially etched were developed for fast IR detecting applications. The stress induced by the p-strain Si/i- heterojun