Zobrazeno 1 - 10
of 239
pro vyhledávání: '"Yen-Kuang Kuo"'
Autor:
Jih-Yuan Chang, Man-Fang Huang, Chih-Yung Huang, Shih-Chin Lin, Ching-Chiun Wang, Yen-Kuang Kuo
Publikováno v:
Crystals, Vol 11, Iss 3, p 271 (2021)
In this study, systematic structural design was investigated numerically to probe into the cross-relating influences of n-AlGaN layer, quantum barrier (QB), and electron-blocking layer (EBL) on the output performance of AlGaN deep-ultraviolet (DUV) l
Externí odkaz:
https://doaj.org/article/b9bef3b48c4342e6bf3f1e685063646c
Publikováno v:
IEEE Journal of Quantum Electronics. 57:1-6
Characterization and structural design on monolithic stacked InGaN light-emitting diode (LED) are investigated numerically in an attempt to pursue multicolor light emission and wide spectral width. Crucial physical properties such as the energy band
Publikováno v:
Organic Photonic Materials and Devices XXIV.
Publikováno v:
Micro and Nanostructures. 174:207492
Publikováno v:
Micro and Nanostructures. 174:207494
Publikováno v:
IEEE Transactions on Electron Devices. 66:976-982
In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteri
Publikováno v:
Organic Photonic Materials and Devices XXIII.
In this study, the effect of exciton-blocking layer (EBL), employed between the electron-transporting layer (ETL) and the undoped host spacer layer, on the characteristics of fluorescent/phosphorescent multilayer white organic lightemitting diode (OL
Autor:
Ming-Lun Lee, Yen-Kuang Kuo, Man-Fang Huang, Jih-Yuan Chang, Fang-Ming Chen, Jinn-Kong Sheu, Ya-Hsuan Shih
Publikováno v:
IEEE Transactions on Electron Devices. 65:165-171
The design of monolithic multicolor tunnel-junction (TJ) light-emitting diodes (LEDs) are investigated numerically. This paper primarily aims to design and study monolithic TJ LED devices that possess high luminous efficiency and wide color gamut usi
Publikováno v:
IEEE Transactions on Electron Devices. 64:4980-4984
Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum ba
Publikováno v:
IEEE Journal of Quantum Electronics. 53:1-6
The polarization effect in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated, which is critical for the development of DUV LEDs, because the basal material, epitaxial structure, and polarization characteristics are very