Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Yen Ku Lin"'
Autor:
Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 893-899 (2018)
A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate ins
Externí odkaz:
https://doaj.org/article/56af2a5b502a41ebb7cea73bc5646100
Autor:
Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 856-860 (2018)
In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with $W_{\mathrm{ fin}}$ down to 20 nm, EOT of 2.1 nm, and $L_{G} = 60$ nm shows high $I_{\mathrm{ ON}} = 188~\mu \text{A}/\mu \text{m}
Externí odkaz:
https://doaj.org/article/c5dab5b9ff754d93ad7d8c0994cb13d9
Autor:
Huan-Chung Wang, Ping-Cheng Han, Quang Ho Luc, Franky Lumbantoruan, Po-Chun Chang, Kun-Sheng Yang, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Yu-Hsuan Ho, Edward Yi Chang, Shih-Chien Liu, Jian-You Chen, Ting-En Hsieh
Publikováno v:
IEEE Electron Device Letters. 39:991-994
A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped
Autor:
Chia-Hsun Wu, Heng-Tung Hsu, Shuichi Noda, Yen-Ku Lin, Seiji Samukawa, Chia-Ching Huang, Quang Ho Luc, Po-Chun Chang, Hsiao-Chieh Lo, Edward Yi Chang
Publikováno v:
IEEE Electron Device Letters. 38:771-774
High-performance GaN metal–oxide–semi-conductor high-electron-mobility transistors (MOSHEMTs) using Al2O3 gate dielectric deposited by atomic layer deposition (ALD) and damage-free neutral beam etch (NBE) gate recess process for millimeter-wave p
Autor:
Chia-Hsun Wu, Edward Yi Chang, Po-Chun Chang, Yueh-Chin Lin, Quang Ho Luc, Simon M. Sze, Yen-Ku Lin
Publikováno v:
IEEE Electron Device Letters. 38:310-313
In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH3 post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO2/InGaAs gate stack. Transistors with gate lengths down to 80
Autor:
Shuichi Noda, Po-Chun Chang, Shih-Chien Liu, Heng-Tung Hsu, Hsiao-Chieh Lo, Edward Yi Chang, Yuen Yee Wong, Yen-Ku Lin, Seiji Samukawa, Chia-Hsun Wu, Quang Ho Luc
Publikováno v:
IEEE Electron Device Letters. 37:1395-1398
The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated
Autor:
Yen-Ku Lin, Edward Yi Chang
Publikováno v:
2019 19th International Workshop on Junction Technology (IWJT).
GaN-based high electron mobility transistor (HEMT) is a promising candidate for high-frequency and high-power applications due to its outstanding material properties, such as high electric breakdown field and high peak electron drift velocity. A low
Autor:
Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang, Quang Ho Luc, Simon M. Sze, Yen-Ku Lin, Shih-Chien Liu
Publikováno v:
IEEE Transactions on Electron Devices. 63:3466-3472
We report a notable improvement in performance, electron transport, and reliability of HfO2/In0.53Ga0.47As nMOSFETs using a plasma-enhanced atomic layer deposition AlN interfacial passivation layer (IPL) and NH3 postremote plasma treatment (PRPT). Th
Autor:
Wei Ching Huang, Edward Yi Chang, Chia Hsun Wu, Kai Wei Chen, Yen Ku Lin, Yuen Yee Wong, Chung Ming Chu, Wei I. Lee
Publikováno v:
Materials Science in Semiconductor Processing. 45:1-8
The effects of different AlN buffer deposition temperatures on the GaN material properties grown on sapphire substrate was investigated. At relatively higher AlN buffer growth temperature, the surface morphology of subsequent grown GaN layer was deco
Publikováno v:
MRS Proceedings. 1538:291-302
III-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality hig