Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Yejoo Choi"'
Autor:
Daeyoung Chu, Sanghyun Kang, Gwon Kim, Juho Sung, Jaehyuk Lim, Yejoo Choi, Donghwan Han, Changhwan Shin
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100492- (2024)
Utilizing Ag/HfO2 with nickel (Ni) as a barrier layer, a novel threshold switching (TS) device is devised to overcome challenges such as low reliability, high threshold voltage, and high leakage current. Compared against an Ag/Ti/HfO2-based TS device
Externí odkaz:
https://doaj.org/article/66cb822dfa5c401e8d6b38e08a9b01bf
Autor:
Yejoo Choi, Sungho Shin, Hyo Jin Son, Na-Hee Lee, Su Hyeon Myeong, Cheolju Lee, Hyemin Jang, Soo Jin Choi, Hee Jin Kim, Duk L. Na
Publikováno v:
Stem Cell Research & Therapy, Vol 14, Iss 1, Pp 1-14 (2023)
Abstract Background Preclinical studies showed that mesenchymal stem cells (MSCs) ameliorate tau phosphorylation, amyloid-beta accumulation, and inflammation in Alzheimer’s disease (AD) mouse models via secretion of neurotrophic factors and cytokin
Externí odkaz:
https://doaj.org/article/aa8ddbb3f9aa44e786115a284096bc19
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract In this work, the impact of fluorine (CF4) and oxygen (O2) plasma passivation on HfZrOx (HZO) based ferroelectric capacitor was investigated. By the fluorine passivation, the surface trap density and oxygen vacancies in the HZO-based Metal
Externí odkaz:
https://doaj.org/article/b55d21736a464d6f900339c42cf802f6
Autor:
Sojin Jeong, Sangwoo Han, Ho-Jun Lee, Deokjoon Eom, Gisu Youm, Yejoo Choi, Seungjun Moon, Kyungjin Ahn, Jinju Oh, Changhwan Shin
Publikováno v:
IEEE Access, Vol 9, Pp 116953-116961 (2021)
A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO2-based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS
Externí odkaz:
https://doaj.org/article/8a24f2572cf74700a250f05d17324054
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 182-188 (2020)
The key feature of NCFET (negative capacitance field effect transistor) is its sub-threshold slope (SS)
Externí odkaz:
https://doaj.org/article/ae39e03d36a24069a4482d968c29de1c
Autor:
Yejoo Choi, Changwoo Han, Jaemin Shin, Seungjun Moon, Jinhong Min, Hyeonjung Park, Deokjoon Eom, Jehoon Lee, Changhwan Shin
Publikováno v:
Sensors, Vol 22, Iss 11, p 4087 (2022)
The endurance characteristic of Zr-doped HfO2 (HZO)-based metal–ferroelectric–metal (MFM) capacitors fabricated under various deposition/annealing temperatures in the atomic layer deposition (ALD) process was investigated. The chamber temperature
Externí odkaz:
https://doaj.org/article/8ab63427ed514869ad155f5f8c305a2c
Publikováno v:
Micromachines, Vol 11, Iss 5, p 525 (2020)
Threshold voltage adjustment in threshold switching (TS) devices with HfO2/Al2O3 superlattice (by means of changing the cycle ratio of HfO2 to Al2O3 in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices
Externí odkaz:
https://doaj.org/article/10c8878b8e1541c0a87acd6d9943baae
Publikováno v:
IEEE Electron Device Letters. 44:713-716
Autor:
Mungyo Jung, Hyeongseop Kim, Jung Won Hwang, Yejoo Choi, Mikyung Kang, Cheesue Kim, Jihye Hong, Na Kyung Lee, Sangjun Moon, Jong Wook Chang, Suk-joo Choi, Soo-young Oh, Hyemin Jang, Duk L. Na, Byung-Soo Kim
Publikováno v:
Nano Letters. 23:476-490
Publikováno v:
IEEE Electron Device Letters. 43:1953-1956