Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yehwan Kim"'
Autor:
Seho Sun, Kangchun Lee, Ganggyu Lee, Yehwan Kim, Sungmin Kim, Junha Hwang, Hyungoo Kong, Kyung Yoon Chung, Ghulam Ali, Taeseup Song, Ungyu Paik
Publikováno v:
Journal of Industrial and Engineering Chemistry. 111:219-225
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ce99fef112fa0c50b9e113855891de0
https://doi.org/10.1016/j.jiec.2022.04.001
https://doi.org/10.1016/j.jiec.2022.04.001
Publikováno v:
ECS Meeting Abstracts. :1425-1425
Ceria has been widely used as an abrasive for polishing SiO2 film due to the high removal rate of SiO2 during Shallow Trench Isolation (STI) CMP.1 As the scale of transistor has been reduced, the number of maximum acceptable defects was decreased. Re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981ce26331d8d40a8d7313f5a0c0fcf3
https://doi.org/10.1149/ma2014-01/38/1425
https://doi.org/10.1149/ma2014-01/38/1425
Publikováno v:
ECS Meeting Abstracts. :1429-1429
Shallow trench isolation (STI) process has been a crucial technology to isolate the transistors in ultra large scale integration (ULSI) device [1]. In STI process, step height of dielectric material is inevitably formed after gap-filling process due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::383341b756f3185eb9a334a300911ceb
https://doi.org/10.1149/ma2014-01/38/1429
https://doi.org/10.1149/ma2014-01/38/1429