Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yehia Tawfik"'
Publikováno v:
Ain Shams Engineering Journal, Vol 14, Iss 6, Pp 102175- (2023)
Retrofitting existing buildings to raise energy efficiency is a highly important requirement, Because the problem of climate change has made the concept energy-saving an increasingly popular concept as a solution to this problem. Most of existing bui
Externí odkaz:
https://doaj.org/article/cb877b09f87344bda833f26152305e27
Publikováno v:
Ahamed, R, Varonen, M, Parveg, D, Najmussadat, M, Tawfik, Y & Halonen, K A I 2022, ' A 200-250-GHz Phase Shifter Utilizing a Compact and Wideband Differential Quadrature Coupler ', IEEE Microwave and Wireless Components Letters, vol. 32, no. 7, pp. 883-886 . https://doi.org/10.1109/LMWC.2022.3157790
This letter presents the design of a 200-250-GHz compact vector modulator (VM) phase shifter in a 0.13- μm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. A compact, low-loss, and wideband differential quadrature coupler is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ddb65360acdb6d9d773f0901c6f9e77
https://cris.vtt.fi/en/publications/67f19737-6a70-4b86-bf87-a35491b55d90
https://cris.vtt.fi/en/publications/67f19737-6a70-4b86-bf87-a35491b55d90
Publikováno v:
VTT Technical Research Centre of Finland-PURE
Najmussadat, M, Ahamed, R, Varonen, M, Parveg, D, Tawfik, Y & Halonen, K A I 2021, Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology . in EuMIC 2020-2020 15th European Microwave Integrated Circuits Conference ., 9337305, IEEE Institute of Electrical and Electronic Engineers, pp. 17-20, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21 .
Najmussadat, M, Ahamed, R, Varonen, M, Parveg, D, Tawfik, Y & Halonen, K A I 2021, Design of a 240-GHz LNA in 0.13 µm SiGe BiCMOS Technology . in EuMIC 2020-2020 15th European Microwave Integrated Circuits Conference ., 9337305, IEEE Institute of Electrical and Electronic Engineers, pp. 17-20, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21 .
In this paper, a seven stage low noise amplifier (LNA) in a 0.13 µm SiGe BiCMOS technology is presented. The LNA has a measured peak gain of 28.5 dB at 240 GHz with a 3-dB bandwidth of 14 GHz. It shows a simulated noise figure of 13.7 dB at 240 GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6267618cd6e5d865ac0931a2a30bdfef
https://aaltodoc.aalto.fi/handle/123456789/103402
https://aaltodoc.aalto.fi/handle/123456789/103402
Publikováno v:
VTT Technical Research Centre of Finland-PURE
Tawfik, Y, Raju, A, Varonen, M, Najmussadat, M & Halonen, K A I 2021, 250 GHz SiGe SPDT Resonator Switch . in EuMIC 2020-2020 15th European Microwave Integrated Circuits Conference ., 9337419, IEEE Institute of Electrical and Electronic Engineers, pp. 289-291, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21 . < https://ieeexplore.ieee.org/document/9337419 >
Tawfik, Y, Raju, A, Varonen, M, Najmussadat, M & Halonen, K A I 2021, 250 GHz SiGe SPDT Resonator Switch . in EuMIC 2020-2020 15th European Microwave Integrated Circuits Conference ., 9337419, IEEE Institute of Electrical and Electronic Engineers, pp. 289-291, 15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, Netherlands, 11/01/21 . < https://ieeexplore.ieee.org/document/9337419 >
This work demonstrates a single-pole double-throw resonator switch designed at 250 GHz in 0.13-µm SiGe BiCMOS technology with ft/fmax of 300/500. The resonator switch demonstrates a minimum measured de-embedded insertion loss of 4.2 dB, maximum isol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c2cdae587adedce72f29b69a5b79a695
https://cris.vtt.fi/en/publications/223399b2-fe6d-4fdb-a6e0-41b3f21307a2
https://cris.vtt.fi/en/publications/223399b2-fe6d-4fdb-a6e0-41b3f21307a2