Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yeehyun Park"'
Autor:
Seunghun Kang, Woo-Sung Jang, Anna N. Morozovska, Owoong Kwon, Yeongrok Jin, Young-Hoon Kim, Hagyoul Bae, Chenxi Wang, Sang-Hyeok Yang, Alex Belianinov, Steven Randolph, Eugene A. Eliseev, Liam Collins, Yeehyun Park, Sanghyun Jo, Min-Hyoung Jung, Kyoung-June Go, Hae Won Cho, Si-Young Choi, Jae Hyuck Jang, Sunkook Kim, Hu Young Jeong, Jaekwang Lee, Olga S. Ovchinnikova, Jinseong Heo, Sergei V. Kalinin, Young-Min Kim, Yunseok Kim
Publikováno v:
Science. 376:731-738
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f9cae0126ed38d6e281bf67187c97cc
https://doi.org/10.1126/science.abk3195
https://doi.org/10.1126/science.abk3195
Autor:
Yeehyun Park, Owoong Kwon, Marin Alexe, Sanghyun Jo, Seunghun Kang, Xiaoli Lu, Yun Do Kim, Yunseok Kim, Woo Lee, Jinseong Heo, Hee Han
Owing to their switchable spontaneous polarization, ferroelectric materials have been applied in various fields, such as information technologies, actuators, and sensors. In the last decade, as the characteristic sizes of both devices and materials h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::474febd23a76f966369caeb74d70a6ba
http://wrap.warwick.ac.uk/158874/7/WRAP-Quantitative-local-probing-polarization-application-HfO-2-based-thin-films-2021.pdf
http://wrap.warwick.ac.uk/158874/7/WRAP-Quantitative-local-probing-polarization-application-HfO-2-based-thin-films-2021.pdf
Autor:
Owoong, Kwon, Seunghun, Kang, Sanghyun, Jo, Yun Do, Kim, Hee, Han, Yeehyun, Park, Xiaoli, Lu, Woo, Lee, Jinseong, Heo, Marin, Alexe, Yunseok, Kim
Publikováno v:
Small methods. 5(11)
Owing to their switchable spontaneous polarization, ferroelectric materials have been applied in various fields, such as information technologies, actuators, and sensors. In the last decade, as the characteristic sizes of both devices and materials h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1374b974808a01b078ade6cc165d9754
https://pubmed.ncbi.nlm.nih.gov/34927955
https://pubmed.ncbi.nlm.nih.gov/34927955
Autor:
Jinseong Heo, Hyangsook Lee, Yeehyun Park, Yeonchoo Cho, Duk-Hyun Choe, Hyun Hwi Lee, Hyoungsub Kim, Seunghun Kang, Mirine Leem, Eunha Lee, Taehwan Moon, Jung-Hwa Kim, Sanghyun Jo, Yunseok Kim, Deokjoon Eom, Seontae Park, Hyun-Joon Shin
Publikováno v:
ACS applied materialsinterfaces. 13(30)
HfO2-based ferroelectrics are highly expected to lead the new paradigm of nanoelectronic devices owing to their unexpected ability to enhance ferroelectricity in the ultimate thickness scaling limit (≤2 nm). However, an understanding of its physica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb5c95801315ddde3ef2c626df5fb796
https://pubmed.ncbi.nlm.nih.gov/34310129
https://pubmed.ncbi.nlm.nih.gov/34310129
Autor:
Owoong Kwon, Seunghun Kang, Sanghyun Jo, Yun Do Kim, Hee Han, Yeehyun Park, Xiaoli Lu, Woo Lee, Jinseong Heo, Alexe, Marin, Yunseok Kim
Publikováno v:
Small Methods; 11/15/2021, Vol. 5 Issue 11, p1-6, 6p
Autor:
Seunghun Kang, Woo-Sung Jang, Morozovska, Anna N., Owoong Kwon, Yeongrok Jin, Young-Hoon Kim, Hagyoul Bae, Chenxi Wang, Sang-Hyeok Yang, Belianinov, Alex, Randolph, Steven, Eliseev, Eugene A., Collins, Liam, Yeehyun Park, Sanghyun Jo, Min-Hyoung Jung, Kyoung-June Go, Hae Won Cho, Si-Young Choi, Jae Hyuck Jang
Publikováno v:
Science; 5/13/2022, Vol. 376 Issue 6594, p731-738, 8p, 4 Color Photographs
Autor:
Seungse Cho, Sunyoung Yoon, Yunseok Kim, Hyunhyub Ko, Hyeong-Min Sim, Yeehyun Park, Han-Ki Kim
Publikováno v:
Advanced Materials Interfaces. 8:2170015
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::157655814aadfdfe07b0be0797858eb1
https://doi.org/10.1002/admi.202170015
https://doi.org/10.1002/admi.202170015
Autor:
Yeehyun Park, Han-Ki Kim, Hyunhyub Ko, Seungse Cho, Hyeong-Min Sim, Sunyoung Yoon, Yunseok Kim
Publikováno v:
Advanced Materials Interfaces. 8:2001500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8b1e2f81ee56358deb0d3138dc42284
https://doi.org/10.1002/admi.202001500
https://doi.org/10.1002/admi.202001500
Autor:
Kwon, Owoong, Kang, Seunghun, Jo, Sanghyun, Kim, Yun Do, Han, Hee, Park, Yeehyun, Lu, Xiaoli, Lee, Woo, Heo, Jinseong, Alexe, Marin, Kim, Yunseok
Publikováno v:
Small Methods; Nov2021, Vol. 5 Issue 11, p1-6, 6p
Autor:
Yoon, Sunyoung, Sim, Hyeong‐Min, Cho, Seungse, Ko, Hyunhyub, Park, Yeehyun, Kim, Yunseok, Kim, Han‐Ki
Publikováno v:
Advanced Materials Interfaces; 2/5/2021, Vol. 8 Issue 3, p1-1, 1p