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of 4
pro vyhledávání: '"Yee H. Low"'
Autor:
David McNeill, Neil Mitchell, Yee H. Low, M. Bain, Harold Gamble, P. Baine, Paul Rainey, J.H. Montgomery, B. Mervyn Armstrong
Publikováno v:
ECS Transactions. 33:37-50
Silicon-on-sapphire (SOS) substrates have been proven to offer significant advantages in the integration of passive and active devices in RF circuits. Germanium on insulator technology is a candidate for future higher performance circuits. Thus the a
Autor:
Mervyn Armstrong, Paul Rainey, P. Baine, Harold Gamble, Neil Mitchell, Yee H. Low, David McNeill
Publikováno v:
ECS Transactions. 33:153-160
Germanium(Ge) has attractive properties such as high carrier mobility, compatibility with high-K dielectrics, and lattice matched for GaAs growth. Germanium on insulator (GOI) (1) offers the advantages of germanium and combines them with those of sil
Autor:
Paul B. Baine, Yee H. Low, Paul V. Rainey, Harold S. Gamble, Mervyn Armstrong, Neil S. Mitchell, David W. McNeill
Publikováno v:
ECS Meeting Abstracts. :1700-1700
not Available.
Autor:
Harold S. Gamble, Paul B. Baine, Yee H. Low, Paul V. Rainey, John H. Montgomery, B. Mervyn Armstrong, David W. McNeill, Neil S. Mitchell
Publikováno v:
ECS Meeting Abstracts. :1555-1555
not Available.