Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Yedave, Sharad"'
Publikováno v:
In Journal of Manufacturing Processes 2003 5(2):154-162
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Fluorine co-implantation is used in advanced semiconductor device manufacturing for defect engineering, shallow junction formation, and material modification. A common setup for fluorine implantation includes feeding a fluoride dopant source gas into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa89f92e7d3c1e51f6a578792f86e250
https://doi.org/10.1109/iit.2018.8807945
https://doi.org/10.1109/iit.2018.8807945
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Gallium (Ga) has been studied as an alternative p-type dopant to Boron (B) due to its higher solid solubility in Germanium (Ge) and silicon germanium (SiGe), which are used in advanced semiconductor devices for performance improvement. Recent develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d175153a97528e74130ef765e2588e
https://doi.org/10.1109/iit.2018.8807951
https://doi.org/10.1109/iit.2018.8807951
Autor:
Joseph D. Sweeney, Oleg Byl, Ying Tang, Steve Bishop, Yedave Sharad N, Joseph R. Despres, Eric Tien
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Co-implantation of impurities such as carbon (C) has been proven to effectively reduce Transient Enhanced Diffusion (TED) of boron during annealing, enabling the formation of high-quality ultra-shallow junctions - a requirement for advanced-node semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1051bfa2c50a6c3a906b5b85ca99a2
https://doi.org/10.1109/iit.2016.7882851
https://doi.org/10.1109/iit.2016.7882851
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
With the continued scaling of semiconductor devices, controlling contact resistance becomes more and more challenging. Selenium (Se) ion implantation is noted in the literatures to effectively reduce contact resistance in NMOS transistors by lowering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18eaab8c78d5c7dc5005add8292cfa61
https://doi.org/10.1109/iit.2016.7882878
https://doi.org/10.1109/iit.2016.7882878
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Beamline implant productivity challenges associated with high dose p-type boron doping have been well documented. Recently, BF3/H2 mixtures were shown to be an effective alternative to BF3 in enabling implant tool productivity improvements through th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eef574b038655741ac9f144167de18c
https://doi.org/10.1109/iit.2016.7882884
https://doi.org/10.1109/iit.2016.7882884
Autor:
Biing-Tsair Tien, Shin Woo Kang, Jun Jin Kang, Yedave Sharad N, Ying Tang, Oleg Byl, Young-Ha Yoon, Joseph D. Sweeney, Steve Bishop
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
In recent years, a major challenge facing beamline implant tools is the low productivity of high dose p-type boron doping. A significant aspect of this challenge is the limited ion source life obtained when running boron trifluoride (BF 3 ), the prim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70cb6efb7c0994f61d6bcded0344965
https://doi.org/10.1109/iit.2014.6939985
https://doi.org/10.1109/iit.2014.6939985
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
The advent of new technologies is driving the emergence of alternative doping methods. For instance, plasma doping is potentially a critical enabler for three-dimensional (3D) devices in the integrated circuit (IC) market, requiring flow rates much h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3de66153f0a7858d6b1b1e7407348a5c
https://doi.org/10.1109/iit.2014.6940044
https://doi.org/10.1109/iit.2014.6940044
Autor:
Joseph D. Sweeney, Ying Tang, Joseph R. Despres, Greg Baumgart, Oleg Byl, Barry Lewis Chambers, Yedave Sharad N
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
Ion implantation of germanium in silicon wafers is often troubled by reduced ion source life due to use of germanium tetrafluoride (GeF 4 ) as a source material. The problem is mainly due to tungsten re-deposition, a result of a fluorine-induced halo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::625d9746318e44aaa9175b005aa4dcef
https://doi.org/10.1109/iit.2014.6939988
https://doi.org/10.1109/iit.2014.6939988
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
Silicon Tetrafluoride (SiF 4 ) is a dopant gas of choice for different silicon ion implantation processes used in semiconductor device engineering. It is a primary source of atomic dopants like Si and F, and a potential source of molecular dopants (e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50bf66b7a1276220bac39f076da2e4c3
https://doi.org/10.1109/iit.2014.6939987
https://doi.org/10.1109/iit.2014.6939987