Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Yea-Chen Lee"'
Autor:
Shu Woei Chiou, Shing-Chung Wang, Bo Siao Cheng, Yea-Chen Lee, Hao-Chung Kuo, Tien-Chang Lu, C. E. Lee
Publikováno v:
Japanese Journal of Applied Physics. 46:2450-2453
AlGaInP-based resonant-cavity light-emitting diodes (RCLEDs) with high power and high speed have been fabricated. In this study, the RCLEDs were designed with different light-output aperture sizes 84, 60, and 40 µm, for different applications on pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f8372ca6221ebeefe2e8b0dc68df202
https://doi.org/10.1143/jjap.46.2450
https://doi.org/10.1143/jjap.46.2450
Autor:
Chih-Sung Chang, Ching-Hua Chiu, Tien-Fu Liao, Chia-En Lee, B. S. Cheng, Hao-Chung Kuo, Shing-Chung Wang, Yea-Chen Lee, Tien-Chang Lu
Publikováno v:
IEEE Electron Device Letters. 30:1054-1056
AlGaInP-based metal-bonding light-emitting diodes (LEDs) with micro- and nanoscale textured surface were investigated. The device surface with microbowls and nanorods were formed by a chemical wet-etching and dry-etching technique for enhancing light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b7a8ba34f9057cc77adafbe02bd83f3
https://doi.org/10.1109/led.2009.2028445
https://doi.org/10.1109/led.2009.2028445
Publikováno v:
IEEE Photonics Technology Letters. 20:1950-1952
AlGaInP-based flip-chip light-emitting diodes (LEDs) with geometric sapphire shaping structures were fabricated by sapphire chemical etching and glue-bonded techniques. Furthermore, a nanoscale rough texture was applied on the epiwafer surface. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::278d6ffd7a1c7a40a41463d9ce9935e6
https://doi.org/10.1109/lpt.2008.2005507
https://doi.org/10.1109/lpt.2008.2005507
Publikováno v:
IEEE Photonics Technology Letters. 20:803-805
In this letter, the nitride-based near-ultraviolet (NUV) vertical-injection light-emitting diodes (VLEDs) with roughened mesh-surface are proposed and demonstrated by a combination of pattern sapphire substrate, wafer bonding, laser lift-off, and che
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a324f73a197aa62b2445fb6808a5dadb
https://doi.org/10.1109/lpt.2008.921129
https://doi.org/10.1109/lpt.2008.921129
Publikováno v:
IEEE Photonics Technology Letters. 20:659-661
The flip-chip light-emitting diodes (FC-LEDs) with triple-light scattering layers were investigated comprising a top surface sapphire textured layer, an interface patterned sapphire layer, and a bottom naturally textured p-GaN layer. Such triple-text
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da403fa18c12ec7fdbb397e508f4ce28
https://doi.org/10.1109/lpt.2008.919509
https://doi.org/10.1109/lpt.2008.919509
Autor:
C. E. Lee, Hao-Chung Kuo, Meng-Ru Tsai, Cheng Tzu Kuo, Yea-Chen Lee, S. C. Wang, Tien-Chang Lu
Publikováno v:
IEEE Photonics Technology Letters. 20:184-186
The flip-chip light-emitting diodes (FC-LEDs) with geometric sapphire shaping structure were investigated. The sapphire shaping structure was formed on the bottom side of the sapphire substrate by a chemical wet etching technique for light extraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b11d135070ba5203f618627d6b0baff6
https://doi.org/10.1109/lpt.2007.912990
https://doi.org/10.1109/lpt.2007.912990
Publikováno v:
IEEE Photonics Technology Letters. 20:369-371
AlGaInP-based light-emitting diodes (LEDs) with a transparent sapphire substrate were fabricated by the glue-bonding (GB) method. This transparent sapphire substrate is a geometric shaping structure by wet etching processes. Furthermore, the n-side-u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b43ee71d8ddf49fcd0283711a29253ec
https://doi.org/10.1109/lpt.2008.916905
https://doi.org/10.1109/lpt.2008.916905
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6863f2d443ed01b5917d34814d4da124
https://doi.org/10.7567/ssdm.2009.i-8-4
https://doi.org/10.7567/ssdm.2009.i-8-4
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::238dfa7d3a4d39de79c63d95a2054901
https://doi.org/10.7567/ssdm.2008.p-9-3
https://doi.org/10.7567/ssdm.2008.p-9-3
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da20fd88b9147195e61c8ea9eb9d4dc5
https://doi.org/10.7567/ssdm.2008.p-7-4
https://doi.org/10.7567/ssdm.2008.p-7-4