Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Ye. Verzhak"'
Autor:
Igor Gorichok, P. M. Fochuk, Ye. Verzhak, Aleksey E. Bolotnikov, Ralph B. James, Taras Parashchuk, Dmytro Freik, O. Panchuk
Publikováno v:
Journal of Crystal Growth. 415:146-151
We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (PCd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The
Autor:
P. M. Fochuk, Aleksey E. Bolotnikov, Eduard Belas, I. Nakonechnyi, O. Kopach, Ge Yang, Ye. Verzhak, Roman Grill, O. Panchuk, Ralph B. James
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2346-2351
We studied the electrical properties of Cd0.9Zn0.1Te:In (CZT) single crystals with [In]=3*1015 at/cm3 at its high-temperature point-defect (PD) equilibrium state under a Cd overpressure (PCd). We detailed the influence of thermal treatment and the de
Autor:
O. Kopach, P. M. Fochuk, Ralph B. James, Aleksey E. Bolotnikov, Ye. Nykonyuk, Ye. Verzhak, O. Panchuk
Publikováno v:
IEEE Transactions on Nuclear Science. 56:1784-1790
We measured, in the 873-1173 K temperature range, the temperature- and Cd vapor-pressure-dependences of the free electron density in single CdTe(In) crystals with different In contents. Increasing the cooling rate of the crystals and/or decreasing th
Autor:
Eduard Belas, Pavel Moravec, Jan Franc, Ye. Verzhak, Roman Grill, O. Panchuk, P. Höschl, B. Nahlovskyy, P. M. Fochuk
Publikováno v:
IEEE Transactions on Nuclear Science. 54:792-797
The evolution of defect structure occurring during the cooling of Tellurium-rich CdTe is studied theoretically and experimentally. Classical nucleation theory is applied to comprehend the precipitation of excess Te and a formation of Te precipitates
Publikováno v:
physica status solidi (b). 244:1655-1661
High temperature equilibrium in situ in CdTe(In) single crystals in a wide range of temperature (700-1200 K) and dopant content (6 x 10 16 ∼10 20 at/cm 3 ) was studied. Self-compensation processes, which occur at these conditions, were modelled usi
Publikováno v:
physica status solidi c. 3:821-824
High temperature Hall effect measurements at 570–1070 K under well defined Te vapor pressure in CdTe single crystals grown by THM and Bridgman techniques were made. Both the free carrier density versus Te vapour pressure value and temperature depen
Autor:
O. Kopach, P. M. Fochuk, A. V. Rybka, Kyung Hyun Kim, Yonggang Cui, I. Nakonechnyi, A. E. Bolotnikov, Ge Yang, Igor Terzin, G. C. Camarda, Ye. Verzhak, Anwar Hossain, V. K. Komar, O. Panchuk, Vladimir Kutnij, Ralph B. James, Yevhen Nykoniuk
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV.
We evaluated the effect of high-temperature treatment of Cd0.9Zn0.1Te:In single crystals using Hall-effect measurements, medium- and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy An
Autor:
Aleksey E. Bolotnikov, Ye. Nykonyuk, Ralph B. James, P. M. Fochuk, Ye. Verzhak, O. Kopach, O. Panchuk
Publikováno v:
2008 IEEE Nuclear Science Symposium Conference Record.
We measured, in the 873-1173 K temperature range, the temperature- and Cd vapor-pressure-dependences of the free electron density in single Cd 1-x Zn x Te≪In≫ (0 ≤ × ≤ 0.1) crystals with different In contents. Increasing the cooling rate of
Autor:
P. M. Fochuk, Ye. Verzhak, O. Panchuk, Ralph B. James, Taras Parashchuk, Igor Gorichok, Dmytro Freik, Aleksey E. Bolotnikov
Publikováno v:
Journal of Crystal Growth. 421:75
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