Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ye. N. Aliyeva"'
Autor:
N. A. Abdullayev, Kh. V. Aliguliyeva, V. N. Zverev, Z. S. Aliev, I. R. Amiraslanov, M. B. Babanly, Z. A. Jahangirli, Ye. N. Aliyeva, Kh. N. Akhmedova, T. G. Mammadov, M. M. Otrokov, A. M. Shikin, N. T. Mamedov, E. V. Chulkov
Publikováno v:
Physics of the Solid State. 63:1120-1125
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a17d6eafcdac78589cd8625580842de
https://doi.org/10.1134/s1063783421080023
https://doi.org/10.1134/s1063783421080023
In As1–x Sb x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
Autor:
R. R. Guseynov, Gela Kipshidze, N. A. Abdullayev, V. A. Tanriverdiyev, Nazim Mamedov, Ye. N. Aliyeva, Kh. V. Aliguliyeva
Publikováno v:
Semiconductors. 51:524-530
Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::142d94c241ccd2b33e53bec0959147db
https://doi.org/10.1134/s1063782617040066
https://doi.org/10.1134/s1063782617040066