Zobrazeno 1 - 10
of 771
pro vyhledávání: '"Ye, PeiDe"'
Autor:
Mönch, Erwin, Moldavskaya, Mariya D., Golub, Leonid E., Bel'kov, Vasily V., Wunderlich, Jörg, Weiss, Dieter, Gumenjuk-Sichevska, Joanna, Niu, Chang, Ye, Peide D., Ganichev, Sergey D.
Nonlinear electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's electric field, is observed. Contributions sensitive to radiation helici
Externí odkaz:
http://arxiv.org/abs/2410.17888
Autor:
Zhang, Kunyan, Fu, Chuliang, Kelly, Shelly, Liang, Liangbo, Kang, Seoung-Hun, Jiang, Jing, Zhang, Ruifang, Wang, Yixiu, Wan, Gang, Siriviboon, Phum, Yoon, Mina, Ye, Peide, Wu, Wenzhuo, Li, Mingda, Huang, Shengxi
Polarons, quasiparticles arising from electron-phonon coupling, are crucial in understanding material properties such as high-temperature superconductivity and colossal magnetoresistance. However, scarce studies have been performed to investigate the
Externí odkaz:
http://arxiv.org/abs/2409.08458
Autor:
Park, Seohyeon, Yoo, Jaewook, Song, Hyeojun, Lee, Hongseung, Lim, Seongbin, Kim, Soyeon, Park, Minah, Kim, Bongjoong, Heo, Keun, Ye, Peide D., Bae, Hagyoul
We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the ferroelectr
Externí odkaz:
http://arxiv.org/abs/2407.18187
Autor:
Yuan, Yifan, Kotiuga, Michele, Park, Tae Joon, Ni, Yuanyuan, Saha, Arnob, Zhou, Hua, Sadowski, Jerzy T., Al-Mahboob, Abdullah, Yu, Haoming, Du, Kai, Zhu, Minning, Deng, Sunbin, Bisht, Ravindra S., Lyu, Xiao, Wu, Chung-Tse Michael, Ye, Peide D., Sengupta, Abhronil, Cheong, Sang-Wook, Xu, Xiaoshan, Rabe, Karin M., Ramanathan, Shriram
Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 in
Externí odkaz:
http://arxiv.org/abs/2311.12200
Autor:
Niu, Chang, Huang, Shouyuan, Ghosh, Neil, Tan, Pukun, Wang, Mingyi, Wu, Wenzhuo, Xu, Xianfan, Ye, Peide D.
Publikováno v:
Nano Letters 23, no. 8 (2023): 3599-3606
Chirality arises from the asymmetry of matters, where two counterparts are the mirror image of each other. The interaction between circular-polarization light and quantum materials is enhanced in chiral space groups due to the structural chirality. T
Externí odkaz:
http://arxiv.org/abs/2309.06404
In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We consider the effects of polycrystallinity in conjunction with multi-domain ef
Externí odkaz:
http://arxiv.org/abs/2303.15625
Autor:
Lin, Zehao, Si, Mengwei, Askarpour, Vahid, Niu, Chang, Charnas, Adam, Shang, Zhongxia, Zhang, Yizhi, Hu, Yaoqiao, Zhang, Zhuocheng, Liao, Pai-Ying, Cho, Kyeongjae, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D.
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 tr
Externí odkaz:
http://arxiv.org/abs/2205.00357
Autor:
Zhang, Zhuocheng, Lin, Zehao, Liao, Pai-Ying, Askarpour, Vahid, Dou, Hongyi, Shang, Zhongxia, Charnas, Adam, Si, Mengwei, Alajlouni, Sami, Noh, Jinhyun, Shakouri, Ali, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, Ye, Peide D.
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20 mA/{\mu}m
Externí odkaz:
http://arxiv.org/abs/2205.00360
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of alternative semicond
Externí odkaz:
http://arxiv.org/abs/2203.02869
Autor:
Niu, Chang, Qiu, Gang, Wang, Yixiu, Tan, Pukun, Wang, Mingyi, Jian, Jie, Wang, Haiyan, Wu, Wenzhuo, Ye, Peide D.
Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hy
Externí odkaz:
http://arxiv.org/abs/2201.08829