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Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface

Autor: Liang, L., Shan, J., Chen, Q. H., Lu, J. M., Blake, G. R., Palstra, T. T. M., Bauer, G. E. W., van Wees, B. J., Ye, J. T.

Publikováno v: Phys. Rev. B 98, 134402 (2018)

We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength

Externí odkaz: http://arxiv.org/abs/1808.06266

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Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating

Autor: Liang, L., Chen, Q. H., Lu, J. M., Talsma, W., Shan, J., Blake, G. R., Palstra, T. T. M., Ye, J. T.

Publikováno v: Science Advances 4 (4), eaar2030 (2018)

Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interests since the emergence of spintronics. In this work, we report the reversible electrical switch

Externí odkaz: http://arxiv.org/abs/1802.04448

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A full superconducting dome of strong Ising protection in gated monolayer WS2

Autor: Lu, J. M., Zheliuk, O., Chen, Q. H., Leermakers, I., Hussey, N. E., Zeitler, U., Ye, J. T.

Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as higher transition temperature and stronger critical field. Nevertheless, besides being air unstable, weak tunabi

Externí odkaz: http://arxiv.org/abs/1703.06369

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Two Dimensional Ising Superconductivity in Gated MoS$_{2}$

Autor: Lu, J. M., Zeliuk, O., Leermakers, I., Yuan, Noah F. Q., Zeitler, U., Law, K. T., Ye, J. T.

Publikováno v: Science 350, 1353 (2015)

The Zeeman effect, which is usually considered to be detrimental to superconductivity, can surprisingly protect the superconducting states created by gating a layered transition metal dichalcogenide. This effective Zeeman field, which is originated f

Externí odkaz: http://arxiv.org/abs/1506.07620

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Accessing the transport properties of graphene and its multi-layers at high carrier density

Autor: Ye, J. T., Craciun, M. F., Koshino, M., Russo, S., Inoue, S., Yuan, H. T., Shimotani, H., Morpurgo, A. F., Iwasa, Y.

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the co

Externí odkaz: http://arxiv.org/abs/1010.4679

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