Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Yaw-Hwang Chen"'
Publikováno v:
Engineering Science and Technology, an International Journal, Vol 19, Iss 2, Pp 888-893 (2016)
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (
Externí odkaz:
https://doaj.org/article/c662fbaacfa04e48909a8eec02091137
Publikováno v:
Analog Integrated Circuits and Signal Processing. 96:9-19
A dynamic frequency divider using a negative-differential-resistance (NDR) circuit combined with an inductor and a capacitor was demonstrated. This NDR circuit was made of Si-based metal-oxide-semiconductor field-effect transistor (MOS) and SiGe-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7b871d7097c2ad4ffdc15bf2c698891
https://doi.org/10.1007/s10470-018-1200-y
https://doi.org/10.1007/s10470-018-1200-y
Publikováno v:
Far East Journal of Electronics and Communications. 16:189-198
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e978d9f9ae87d001c9f5718a7c15412f
https://doi.org/10.17654/ec016010189
https://doi.org/10.17654/ec016010189
Publikováno v:
Scipedia Open Access
Scipedia SL
Engineering Science and Technology, an International Journal, Vol 19, Iss 2, Pp 888-893 (2016)
Scipedia SL
Engineering Science and Technology, an International Journal, Vol 19, Iss 2, Pp 888-893 (2016)
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9adeadc66284bee4a832ccfcb6c8c8f6
https://www.scipedia.com/public/Gan_et_al_2016a
https://www.scipedia.com/public/Gan_et_al_2016a
Publikováno v:
Analog Integrated Circuits and Signal Processing. 70:141-145
The behavior of a novel frequency divider circuit using negative differential resistance (NDR) circuit is studied. This NDR circuit is made of resistors (R) and bipolar-junction-transistor (BJT) devices. It can show the NDR characteristic in its comb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ab06e4b89f3e53eef1550fb7194e410
https://doi.org/10.1007/s10470-011-9653-2
https://doi.org/10.1007/s10470-011-9653-2
Publikováno v:
Solid-State Electronics. 52:882-885
The design of a four-valued multiplexer using the negative differential resistance (NDR) circuit is demonstrated. The NDR circuit used in this work is made of the Si-based metal–oxide–semiconductor field-effect-transistor (MOS) and the SiGe-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c28bccebdb0ce8b7b887d01f6f454e30
https://doi.org/10.1016/j.sse.2008.01.006
https://doi.org/10.1016/j.sse.2008.01.006
Publikováno v:
Solid-State Electronics. 52:175-178
A multiple-input NOR logic gate using the negative differential resistance (NDR) circuit is demonstrated. The NDR circuit is composed of four resistors (R) and two SiGe-based heterojunction bipolar transistor (HBT), and it can show the NDR characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::077a795a55c49fa96aa44faeaac7b2cd
https://doi.org/10.1016/j.sse.2007.10.004
https://doi.org/10.1016/j.sse.2007.10.004
Publikováno v:
Journal of Biological Systems. 13:105-115
The distance distributions of the four types of bases A, C, G and T in the complete sequences of human genome are shown to have long-tail power-law but short-distance exponential behaviors. However, the random sequences with identical numbers of base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e30d3de3c1ecae7cde816845dc62fbd
https://doi.org/10.1142/s0218339005001434
https://doi.org/10.1142/s0218339005001434
Publikováno v:
Japanese Journal of Applied Physics. 45:L977-L979
A trivalued memory circuit based on two cascoded metal–oxide–semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance (MOS-BJT-NDR) devices is investigated. The MOS-BJT-NDR device is made of MOS and BJT d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084a93fb1e001062eba3ce4ecdc7cb5c
https://doi.org/10.1143/jjap.45.l977
https://doi.org/10.1143/jjap.45.l977
Publikováno v:
International Journal of Modern Physics A. 12:2361-2371
We employ the method of differential regularization to calculate explicitly the one-loop effective action of a bosonized UL(3) × UR(3) extended Nambu–Jona-Lasinio model consisting of scalar, pseudoscalar, vector and axial vector fields.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea9a8c8f93e7ffc37fc647139185847
https://doi.org/10.1142/s0217751x97001377
https://doi.org/10.1142/s0217751x97001377