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pro vyhledávání: '"Yatsunskiy I. R."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 62-64 (2008)
The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It
Externí odkaz:
https://doaj.org/article/0354e8c540534ede9237787b0d30d1e7
Autor:
Yatsunskiy, I. R.1 yatsunskiy@gmail.com, Kulinich, O. A.1
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010, Vol. 13 Issue 4, p418-421. 4p. 1 Illustration.