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pro vyhledávání: '"Yatsunkiy I. R."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1-2, Pp 22-24 (2011)
The quantity and quality analysis of plastic deformation and near-surface silicon layers with nanostructure silicon formation are given in this paper. It is shown, due to high-temperature oxidation and other factors the complex defect structure is ge
Externí odkaz:
https://doaj.org/article/bd632b6d983b4b028266c57b5b6e7356
