Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yatsuhiro Takahashi"'
Publikováno v:
Journal of Crystal Growth. 470:37-41
We propose the use of heavily impurity-doped Pb 1- x Sn x Te/PbTe epitaxial layers grown via the temperature difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE) for the preparation of IV–VI compounds for mid- to f
Publikováno v:
Infrared Physics & Technology. 67:609-612
We fabricated a heavily Bi-doped ( x Bi ≈ 2 × 10 19 cm −3 ) PbTe p–n homojunction diode that detects mid-infrared wavelengths by the temperature difference method (TDM) under controlled vapor pressure (CVP) liquid phase epitaxy (LPE). The phot
Autor:
Takafumi Sato, Takashi Takahashi, Norio Kobayashi, Kosuke Nakayama, Terukazu Nishizaki, Yatsuhiro Takahashi
Publikováno v:
Journal of Physics and Chemistry of Solids. 69:2967-2970
We have studied low-energy electronic structure of YBa 2 Cu 3 O 7 - δ using high-resolution angle-resolved photoemission spectroscopy (ARPES). By carefully tuning photon energy and polarization of incident light, we identified five different bands i
Publikováno v:
Journal of Physics and Chemistry of Solids. 69:727-729
Indium-doped PbTe epitaxial layers and pn homojunction diodes were grown on PbTe substrate using the temperature-difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE). The activation ratio of indium donor in the PbTe