Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yatao Ling"'
Publikováno v:
IEEE Access, Vol 9, Pp 122207-122215 (2021)
In hard-switching applications, insulated gate bipolar transistors (IGBTs) always suffer from harmful turn-off peak voltages. To switch the devices safely, it is a common practice to use large enough drive resistances in conventional gate drives (CGD
Externí odkaz:
https://doaj.org/article/d65ff1a3f8634ce08a8b52e9672cb1b1
Publikováno v:
IEEE Transactions on Power Electronics. 36:3450-3461
To gain accurate control of the whole switching transients, this article proposes a self-regulating voltage–source gate drive (SRVSD) method for high-power insulated gate bipolar transistors (IGBTs) working under hard switching conditions. The SRVS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdb08a9b0bad6666ac374a2d42a7bf43
https://doi.org/10.1109/tpel.2020.3015924
https://doi.org/10.1109/tpel.2020.3015924
Publikováno v:
2019 IEEE Energy Conversion Congress and Exposition (ECCE).
This paper proposes a novel digital active gate drive method, aiming to optimize high-power IGBT’s switching losses and stresses. Compared to common voltage-source gate driver, the proposed method can reduce switching losses while being able to sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb8fffa20055da0c3d218053c835101
https://doi.org/10.1109/ecce.2019.8912510
https://doi.org/10.1109/ecce.2019.8912510
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::aa891139793e367303b0984d15c12d9b
http://www.scopus.com/inward/record.url?eid=2-s2.0-85015051735&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85015051735&partnerID=MN8TOARS
